Invention Application
US20160204217A1 DEVICES WITH FULLY AND PARTIALLY SILICIDED GATE STRUCTURES IN GATE FIRST CMOS TECHNOLOGIES
审中-公开
在门第一CMOS技术中具有完全和部分硅胶结构的设备
- Patent Title: DEVICES WITH FULLY AND PARTIALLY SILICIDED GATE STRUCTURES IN GATE FIRST CMOS TECHNOLOGIES
- Patent Title (中): 在门第一CMOS技术中具有完全和部分硅胶结构的设备
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Application No.: US15076895Application Date: 2016-03-22
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Publication No.: US20160204217A1Publication Date: 2016-07-14
- Inventor: Peter Javorka , Stefan Flachowsky , Gerd Zschätzsch
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/51 ; H01L29/161 ; H01L29/78 ; H01L29/165 ; H01L29/24 ; H01L29/267 ; H01L27/092 ; H01L29/16
Abstract:
A semiconductor product with certain devices having a first device with a fully silicided (FuSi) gate and a second device with a partially silicided gate is disclosed. In one example, the first semiconductor device is recessed, resulting in a recessed first gate electrode material which is fully silicided during a subsequent silicidation process. On the gate electrode material of the second semiconductor device, a silicide portion is formed above a layer of polysilicon or amorphous silicon during the silicidation process.
Information query
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