Invention Application
- Patent Title: PROCESS FOR SINGLE DIFFUSION BREAK WITH SIMPLFIED PROCESS
- Patent Title (中): 具有简化过程的单扩张破裂过程
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Application No.: US14609653Application Date: 2015-01-30
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Publication No.: US20160225848A1Publication Date: 2016-08-04
- Inventor: Hui ZANG , Bingwu LIU
- Applicant: GLOBALFOUNDRIES Inc.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762 ; H01L29/66 ; H01L21/02 ; H01L21/311 ; H01L21/28 ; H01L29/10 ; H01L21/3105
Abstract:
A method of forming a SDB including a protective layer or bilayer and the resulting device are provided. Embodiments include forming a SDB of oxide in a Si substrate; forming a nitride layer over the Si substrate; forming a photoresist over the SDB and a portion of the nitride layer; removing the nitride layer on opposite sides of the photoresist down to the Si substrate, leaving a portion of the nitride layer only under the photoresist; forming a gate above the SBD and the portion of the nitride layer.
Public/Granted literature
- US09425252B1 Process for single diffusion break with simplified process Public/Granted day:2016-08-23
Information query
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