Invention Application
US20160284419A1 NONVOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME
审中-公开
非易失性存储器件,其操作方法和包括其的存储器系统
- Patent Title: NONVOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME
- Patent Title (中): 非易失性存储器件,其操作方法和包括其的存储器系统
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Application No.: US15176269Application Date: 2016-06-08
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Publication No.: US20160284419A1Publication Date: 2016-09-29
- Inventor: Sun-Il SHIM , Jae-Hoon JANG , Donghyuk CHAE , Youngho LIM , Hansoo KIM , Jaehun JEONG
- Applicant: Sun-Il SHIM , Jae-Hoon JANG , Donghyuk CHAE , Youngho LIM , Hansoo KIM , Jaehun JEONG
- Priority: KR10-2010-0014275 20100217
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C16/08 ; G11C16/04

Abstract:
Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
Public/Granted literature
- US09747995B2 Nonvolatile memory devices, operating methods thereof and memory systems including the same Public/Granted day:2017-08-29
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