公开(公告)号：US20170330632A1

公开(公告)日：2017-11-16

申请号：US15664303

申请日：2017-07-31

申请人： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

发明人： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC分类号： G11C16/34 ,  G11C16/14 ,  G11C16/04 ,  G11C16/12 ,  G11C16/10 ,  G11C16/08 ,  H01L27/11582 ,  G11C16/26 ,  H01L27/1157

CPC分类号： G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

公开(公告)号：US20160284419A1

公开(公告)日：2016-09-29

申请号：US15176269

申请日：2016-06-08

申请人： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

发明人： Sun-Il SHIM ,  Jae-Hoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC分类号： G11C16/34 ,  G11C16/10 ,  G11C16/08 ,  G11C16/04

CPC分类号： G11C16/3459 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

摘要翻译： 非易失性存储器件，其操作方法和包括其的存储器系统。 非易失性存储器件可以包括存储单元阵列和字线驱动器。 存储单元阵列可以包括多个存储单元。 字线驱动器可以被配置为分别将字线电压施加到连接到多个存储器单元的多个字线。 字线电压的大小可以根据多个字线的位置来确定。

公开(公告)号：US20150348637A1

公开(公告)日：2015-12-03

申请号：US14820895

申请日：2015-08-07

申请人： Jinman HAN ,  Sun-Il SHIM ,  Donghyuk CHAE ,  Jae-Hoon JANG ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

发明人： Jinman HAN ,  Sun-Il SHIM ,  Donghyuk CHAE ,  Jae-Hoon JANG ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

IPC分类号： G11C16/14 ,  G11C16/04

CPC分类号： G11C16/14 ,  G11C16/0466 ,  G11C16/0475 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/12 ,  G11C16/16 ,  G11C16/26 ,  G11C16/3418 ,  H01L27/1157 ,  H01L27/11582

摘要： Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.

公开(公告)号：US20120098048A1

公开(公告)日：2012-04-26

申请号：US13221380

申请日：2011-08-30

申请人： Byeong-In CHOE ,  Jae-Hoon JANG ,  Sun-Il SHIM ,  Han-Soo KIM ,  Jin-Man HAN

发明人： Byeong-In CHOE ,  Jae-Hoon JANG ,  Sun-Il SHIM ,  Han-Soo KIM ,  Jin-Man HAN

IPC分类号： H01L29/792 ,  H01L21/20

CPC分类号： H01L27/11582 ,  H01L29/7926

摘要： A vertical memory device includes a channel, a ground selection line (GSL), word lines and a string selection line (SSL). The channel extends in a first direction substantially perpendicular to a top surface of a substrate, and a thickness of the channel is different according to height. The GSL, the word lines and the SSL are sequentially formed on a sidewall of the channel in the first direction and spaced apart from each other.

摘要翻译： 垂直存储器件包括通道，接地选择线（GSL），字线和字符串选择线（SSL）。 通道沿基本上垂直于基板的顶表面的第一方向延伸，并且通道的厚度根据高度而不同。 GSL，字线和SSL顺序地形成在通道的第一方向的侧壁上并且彼此间隔开。

公开(公告)号：US20130286735A1

公开(公告)日：2013-10-31

申请号：US13920926

申请日：2013-06-18

申请人： Sung-Min HWANG ,  Hansoo KIM ,  Sun-Il SHIM

发明人： Sung-Min HWANG ,  Hansoo KIM ,  Sun-Il SHIM

IPC分类号： G11C16/08 ,  H01L23/48 ,  H01L27/088

CPC分类号： G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  H01L23/48 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7827 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes: a semiconductor region extending vertically from a first region of a substrate; a plurality of gate electrodes disposed on the first region of the substrate in a vertical direction, but separated from each other along a sidewall of the semiconductor region; a gate dielectric layer disposed between the semiconductor region and the plurality of gate electrodes; a substrate contact electrode extending vertically from the impurity-doped second region of the substrate; and an insulating region formed as an air gap between the substrate contact electrode and at least one of the plurality of gate electrodes.

摘要翻译： 半导体存储器件包括：从衬底的第一区域垂直延伸的半导体区域; 沿垂直方向设置在所述基板的所述第一区域上，但沿着所述半导体区域的侧壁彼此分离的多个栅电极; 设置在所述半导体区域和所述多个栅电极之间的栅介质层; 从衬底的杂质掺杂的第二区域垂直延伸的衬底接触电极; 以及形成为所述基板接触电极和所述多个栅极电极中的至少一个之间的气隙的绝缘区域。