Invention Application
- Patent Title: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US15198131Application Date: 2016-06-30
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Publication No.: US20160307776A1Publication Date: 2016-10-20
- Inventor: Mitsuhiro ICHIJO , Tetsuhiro TANAKA , Seiji YASUMOTO , Shun MASHIRO , Yoshiaki OIKAWA , Kenichi OKAZAKI
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2009-255154 20091106
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L29/786 ; H01L29/423 ; C23C16/30 ; H01L29/66 ; H01L29/49 ; H01L21/67 ; C23C16/511 ; H01L29/24 ; H01L21/02
Abstract:
It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.
Information query
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