Invention Application
US20160362296A1 CMOS-MEMS INTEGRATED DEVICE INCLUDING A CONTACT LAYER AND METHODS OF MANUFACTURE
有权
包含接触层的CMOS-MEMS集成器件及其制造方法
- Patent Title: CMOS-MEMS INTEGRATED DEVICE INCLUDING A CONTACT LAYER AND METHODS OF MANUFACTURE
- Patent Title (中): 包含接触层的CMOS-MEMS集成器件及其制造方法
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Application No.: US14738645Application Date: 2015-06-12
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Publication No.: US20160362296A1Publication Date: 2016-12-15
- Inventor: Daesung LEE , Jongwoo SHIN , Jong Il SHIN , Peter SMEYS
- Applicant: InvenSense, Inc.
- Main IPC: B81C1/00
- IPC: B81C1/00
Abstract:
A method for forming a MEMS device is disclosed. The MEMS device includes a MEMS substrate and a base substrate. The MEMS substrate, where includes a handle layer, a device layer and an insulating layer in between. The method includes the sequential steps of: providing a standoff on the device layer; etching a via through the device layer and the insulating layer; providing a contact layer within the via, wherein the contact layer provides electrical connection between the device layer and the handle layer; providing a bonding layer on the standoff; and bonding the bonding layer to pads on the base substrate.
Public/Granted literature
- US09718680B2 CMOS-MEMS integrated device including a contact layer and methods of manufacture Public/Granted day:2017-08-01
Information query
