Invention Application
- Patent Title: MAGNETIC STORAGE CELL MEMORY WITH BACK HOP-PREVENTION
- Patent Title (中): 具有背部预防的磁性存储单元存储器
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Application No.: US14751801Application Date: 2015-06-26
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Publication No.: US20160379700A1Publication Date: 2016-12-29
- Inventor: CHARLES AUGUSTINE , SHIGEKI TOMISHIMA , WEI WU , SHIH-LIEN LU , JAMES W. TSCHANZ , GEORGIOS PANAGOPOULOS , HELIA NAEIMI
- Applicant: Intel Corporation
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.
Public/Granted literature
- US09514796B1 Magnetic storage cell memory with back hop-prevention Public/Granted day:2016-12-06
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