Invention Application
US20160379700A1 MAGNETIC STORAGE CELL MEMORY WITH BACK HOP-PREVENTION 有权
具有背部预防的磁性存储单元存储器

MAGNETIC STORAGE CELL MEMORY WITH BACK HOP-PREVENTION
Abstract:
An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.
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