公开(公告)号：US20160379700A1

公开(公告)日：2016-12-29

申请号：US14751801

申请日：2015-06-26

Applicant: Intel Corporation

Inventor： CHARLES AUGUSTINE ,  SHIGEKI TOMISHIMA ,  WEI WU ,  SHIH-LIEN LU ,  JAMES W. TSCHANZ ,  GEORGIOS PANAGOPOULOS ,  HELIA NAEIMI

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/1659 ,  G11C11/1677 ,  G11C11/1693 ,  G11C11/1697

Abstract: An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.

Abstract translation: 描述了一种包括具有电阻存储单元的半导体芯片存储器阵列的装置。 该装置还包括比较器，用于将写入阵列的第一个字与存储在阵列中的第二个字进行比较，该第二个字由写入操作所指向的位置将第一个字写入数组。 该装置还包括用于迭代地写入一个或多个比特位置的电路​​，其中在每个连续的迭代中随着写入电流强度的增加而在第一个字和第二个字之间存在差异。