Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
-
Application No.: US15271537Application Date: 2016-09-21
-
Publication No.: US20170089957A1Publication Date: 2017-03-30
- Inventor: Keita TAKADA , Nobuya KOIKE , Akihiro NAKAHARA , Makoto TANAKA
- Applicant: RENESAS ELECTRONICS CORPORATION
- Priority: JP2015-193929 20150930
- Main IPC: G01R17/16
- IPC: G01R17/16 ; G01R19/00 ; H01L29/08 ; H01L27/088 ; H01L23/535

Abstract:
A power MOSFET and a sense MOSFET for detecting a current of the power MOSFET are formed in a semiconductor chip, and a source pad and a Kelvin pad are formed of a source electrode for the power MOSFET. The source pad is a pad for outputting the current flowing to the power MOSFET, and the Kelvin pad is a pad for detecting a source potential of the power MOSFET. The source electrode has a slit, and at least a part of the slit is arranged between the source pad and the Kelvin pad when seen in a plan view.
Public/Granted literature
- US10031164B2 Semiconductor device Public/Granted day:2018-07-24
Information query