A magnetic storage track and a magnetic memory are provided. The magnetic storage track includes multiple stacked storage track units. A transition layer is disposed between two neighboring storage track units. The transition layer is constituted by a semiconductor material deposited on an insulating material, and includes a gating circuit and a read/write apparatus. Because the magnetic storage track includes multiple stacked storage track units, a track length of the magnetic storage track is constituted by track lengths of the multiple storage track units. Therefore, when a storage capability of the magnetic storage track needs to be improved, the track length of the magnetic storage track may be increased by adding the storage track unit.