Abstract:
A process management method and a related electronic device are provided. According to the method, process data in a volatile memory can be migrated to a non-volatile memory in real time in a running process of a system. When the system is asleep, data in a memory does not need to be packaged and backed up. When the system is woken up or restarted, data does not need to be parsed and reconstructed, to implement quick sleeping and waking up of the system. In addition, even if the system is restarted due to an unexpected power failure, a loss of key data in the memory can be avoided, and a speed of waking up or restarting the system can also be improved.
Abstract:
An electronic device includes a processor, a volatile memory, and a non-volatile memory. The non-volatile memory stores a first operating system, and the electronic device works in a first working mode and a second working mode. When the electronic device is in the first working mode, a second operating system is run in the volatile memory. When the processor detects that the electronic device reaches a preset condition for entering the second working mode, the non-volatile memory is enabled, and non-system data in the volatile memory is moved to the non-volatile memory. The non-system data does not include the second operating system. After the movement of the non-system data is completed, the volatile memory is disabled, and the first operating system is run in the non-volatile memory, so that the electronic device enters the second working mode.
Abstract:
A cabinet server and a data center where the cabinet server includes multiple function node layers vertically arranged to form a server core and multiple intra-cabinet antennas vertically arranged and disposed at one side of the server core, an intra-cabinet antenna is wirelessly connected to adjacent intra-cabinet antennas. A transmission path is formed of the vertically arranged intra-cabinet antennas when a radio signal is transmitted within the cabinet server. Since the intra-cabinet antennas are disposed at the side of the server core, electromagnetic radiation generated by the radio signal in a transmission process has a relatively small effect on the function nodes, thereby reducing the effect of the electromagnetic radiation on various electronic devices in the function nodes, improving service lives of the electronic devices, and improving transmission quality of the radio signal.
Abstract:
A data storage method applying to the phase change memory and a phase change memory are provided. After obtaining to-be-stored data, the phase change memory generates an erase pulse signal and a write pulse signal according to the to-be-stored data. The to-be-stored data is multi-bit data. The write pulse signal is a signal including at least two consecutive pulses with a same amplitude. The amplitude of the at least two consecutive pulses is a value determined according to the to-be-stored data. Then, the phase change memory applies the erase pulse signal to a storage unit of the phase change memory to allow the storage unit to switch to a crystalline state. Further, the write pulse signal is applied to the storage unit to allow the storage unit to switch to an amorphous state corresponding to a first resistance value, where the amorphous state represents the to-be-stored data.
Abstract:
A data storage method, a storage apparatus and a computing device are disclosed. The method includes receiving a presetting command sent by a CPU, where the presetting command instructs to write 1 to a location, which corresponds to a cache line, in memory; writing, according to the presetting command, 1 to the location, which corresponds to the cache line, in the memory; receiving a write command sent by the CPU of writing data in the cache line to the memory; and writing, according to the write command, data 0 in the cache line to a location, which corresponds to the data 0, in the memory.
Abstract:
Embodiments of the present disclosure provide a memory device. The memory device includes an RRAM crossbar array that is configured to perform a logic operation, and resistance values of resistors in the RRAM crossbar array are all set to Ron or Roff to indicate a value 1 or 0. Based on the foregoing setting, an operation is implemented using the RRAM crossbar array, so that reliability of a logic operation of the RRAM crossbar array can be improved.
Abstract:
A hybrid storage device includes a controller, a volatile storage unit, and a non-volatile storage unit. When the hybrid storage device is in a first working mode, the volatile storage unit is in an enabled state, and the non-volatile storage unit is in a disabled state; when the hybrid storage device is in a second working mode, the non-volatile storage unit is in an enabled state, and the volatile storage unit is in a disabled state. When the hybrid storage device runs in the first working mode, and when detecting that a running parameter of the computer meets a first switching condition, the controller enables the non-volatile storage unit, copies data in the volatile storage unit to the non-volatile storage unit, and switches the hybrid storage device to the second working mode.
Abstract:
A circuit and an array circuit for implementing a shift operation are provided. The circuit for implementing a shift operation includes a resistive random-access memory and four switches. The circuit has a simple structure and can improve computational efficiency.
Abstract:
A first memory access request is obtained, where the first memory access request is used to request to access a first sub-row in a memory. A to-be-scheduled queue of the memory is searched for a second memory access request, where the to-be-scheduled queue of the memory includes multiple memory access requests, the second memory access request is used to request to access a second sub-row in the memory. The first sub-row and the second sub-row are located in a same row in the memory. The first memory access request and the second memory access request are combined to generate a first activation instruction, where the first activation instruction is used to instruct to activate the first sub-row and the second sub-row in the memory. The first activation instruction is sent to the memory.
Abstract:
A circuit and an array circuit for implementing a shift operation are provided. The circuit for implementing a shift operation includes a resistive random-access memory and four switches. The circuit has a simple structure and can improve computational efficiency.