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Invention Application
US20170133083A1 MEMORY DEVICES AND SYSTEMS INCORPORATION BETWEEN-DIMM BUFFERING TO INCREASE CAPACITY AND BANDWIDTH 审中-公开

  • Patent Title: MEMORY DEVICES AND SYSTEMS INCORPORATION BETWEEN-DIMM BUFFERING TO INCREASE CAPACITY AND BANDWIDTH
  • Application No.: US14935291
    Application Date: 2015-11-06
  • Publication No.: US20170133083A1
    Publication Date: 2017-05-11
  • Inventor: Qin Li , Min Wang
  • Applicant: Intel Corporation
  • Applicant Address: US CA Santa Clara
  • Assignee: Intel Corporation
  • Current Assignee: Intel Corporation
  • Current Assignee Address: US CA Santa Clara
  • Main IPC: G11C11/4093
  • IPC: G11C11/4093
MEMORY DEVICES AND SYSTEMS INCORPORATION BETWEEN-DIMM BUFFERING TO INCREASE CAPACITY AND BANDWIDTH
Abstract:
High capacity, high bandwidth memory devices and systems having on-board memory buffering are disclosed and described.
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