Invention Application
- Patent Title: MAGNETIC STATE ELEMENT AND CIRCUITS
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Application No.: US15427968Application Date: 2017-02-08
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Publication No.: US20170148903A1Publication Date: 2017-05-25
- Inventor: Sasikanth MANIPATRUNI , Dmitri E. NIKONOV , Ian A. YOUNG
- Applicant: Intel Corporation
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/22 ; H01L43/10 ; H01L43/12 ; G11C11/16 ; H01L43/08

Abstract:
Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to adjust resistance of the VRM device; and a magnetic logic gating (MLG) device, coupled to the VRM device, to receive a magnetic logic input and perform logic operation on the magnetic logic input and to drive an output magnetic signal based on the resistance of the VRM device. Described is a magnetic de-multiplexer which comprises: a first VRM device to receive a magnetic control signal to adjust resistance of the first VRM; a second VRM device to receive the magnetic control signal to adjust resistance of the second VRM device; and an MLG device, coupled to the first and second VRM devices, the MLG device having at least two output magnets to output magnetic signals based on the resistances of the first and second VRM devices.
Public/Granted literature
- US11139389B2 Magnetic state element and circuits Public/Granted day:2021-10-05
Information query
IPC分类: