Invention Application
- Patent Title: CROSS-POINT ARCHITECTURE FOR SPIN-TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH SPIN ORBIT WRITING
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Application No.: US15067087Application Date: 2016-03-10
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Publication No.: US20170148978A1Publication Date: 2017-05-25
- Inventor: Dmytro Apalkov , Vladimir Nikitin
- Applicant: Samsung Electronics Co., Ltd.
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; G11C11/16 ; H01L43/02
Abstract:
A magnetic memory cell includes: a first spin-orbit interaction active layer; a first magnetic free layer on the first spin-orbit interaction active layer, the first magnetic free layer having a changeable magnetization; a first nonmagnetic spacer layer on the first magnetic free layer; a reference layer having a fixed magnetization on the first nonmagnetic spacer layer; a second nonmagnetic spacer layer on the reference layer; a second magnetic free layer on the second nonmagnetic spacer layer, the second magnetic free layer having a changeable magnetization; and a second spin-orbit interaction active layer on the second magnetic free layer.
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