- 专利标题: VIA ETCH METHOD FOR BACK CONTACT MULTIJUNCTION SOLAR CELLS
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申请号: US15332036申请日: 2016-10-24
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公开(公告)号: US20170213922A1公开(公告)日: 2017-07-27
- 发明人: Ewelina Lucow , Lan Zhang , Sathya Chary , Ferran Suarez
- 申请人: Solar Junction Corporation
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L31/18 ; H01L31/0216 ; H01L31/0304 ; H01L31/0725
摘要:
This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
公开/授权文献
- US10090420B2 Via etch method for back contact multijunction solar cells 公开/授权日:2018-10-02
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