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公开(公告)号:US09680035B1
公开(公告)日:2017-06-13
申请号:US15288559
申请日:2016-10-07
发明人: Sathya Chary , Ewelina Lucow , Sabeur Siala , Ferran Suarez , Ali Torabi , Lan Zhang
IPC分类号: H01L31/0224 , H01L31/18 , H01L31/02 , H01L31/0725 , H01L31/0216
CPC分类号: H01L31/022441 , H01L31/02008 , H01L31/02168 , H01L31/02245 , H01L31/02327 , H01L31/03048 , H01L31/044 , H01L31/047 , H01L31/048 , H01L31/0516 , H01L31/0725 , H01L31/186 , H01L31/188 , Y02E10/50
摘要: Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
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公开(公告)号:US20170213922A1
公开(公告)日:2017-07-27
申请号:US15332036
申请日:2016-10-24
发明人: Ewelina Lucow , Lan Zhang , Sathya Chary , Ferran Suarez
IPC分类号: H01L31/0224 , H01L31/18 , H01L31/0216 , H01L31/0304 , H01L31/0725
CPC分类号: H01L31/022441 , H01L31/02168 , H01L31/02245 , H01L31/0304 , H01L31/0687 , H01L31/0725 , H01L31/076 , H01L31/184 , Y02E10/544 , Y02E10/548
摘要: This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
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公开(公告)号:US10090420B2
公开(公告)日:2018-10-02
申请号:US15332036
申请日:2016-10-24
发明人: Ewelina Lucow , Lan Zhang , Sathya Chary , Ferran Suarez
IPC分类号: H01L31/0224 , H01L31/18 , H01L31/0216 , H01L31/0725 , H01L31/0304
摘要: This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
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公开(公告)号:US09627561B2
公开(公告)日:2017-04-18
申请号:US14679297
申请日:2015-04-06
IPC分类号: H01L31/0352 , H01L31/0687 , H01L31/0304 , H01L31/028 , H01L31/18 , H01L31/0693 , H01L21/306
CPC分类号: H01L31/0352 , H01L21/30612 , H01L31/028 , H01L31/0304 , H01L31/03046 , H01L31/03048 , H01L31/0687 , H01L31/0693 , H01L31/1804 , H01L31/184 , H01L31/1844 , H01L31/1848 , H01L31/186 , Y02E10/544 , Y02P70/521
摘要: A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.
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公开(公告)号:US20180366598A1
公开(公告)日:2018-12-20
申请号:US16111104
申请日:2018-08-23
发明人: Ewelina Lucow , Lan Zhang , Sathya Chary , Ferran Suarez
IPC分类号: H01L31/0224 , H01L31/076 , H01L31/0304 , H01L31/18 , H01L31/0725 , H01L31/0687 , H01L31/0216
摘要: This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
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公开(公告)号:US20170345955A1
公开(公告)日:2017-11-30
申请号:US15498994
申请日:2017-04-27
发明人: Sathya Chary , Ewelina Lucow , Sabeur Siala , Ferran Suarez , Ali Torabi , Lan Zhang
IPC分类号: H01L31/0224 , H01L31/05 , H01L31/0304 , H01L31/0232 , H01L31/047 , H01L31/18 , H01L31/044
CPC分类号: H01L31/022441 , H01L31/02008 , H01L31/02168 , H01L31/02245 , H01L31/02327 , H01L31/03048 , H01L31/044 , H01L31/047 , H01L31/048 , H01L31/0516 , H01L31/0725 , H01L31/186 , H01L31/188 , Y02E10/50
摘要: Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
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