-
公开(公告)号：US10090420B2
公开(公告)日：2018-10-02
申请号：US15332036
申请日：2016-10-24
发明人： Ewelina Lucow , Lan Zhang , Sathya Chary , Ferran Suarez
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0216 , H01L31/0725 , H01L31/0304
摘要： This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
-
公开(公告)号：US09985152B2
公开(公告)日：2018-05-29
申请号：US15391659
申请日：2016-12-27
IPC分类号： H01L31/00 , H01L31/0304 , H01L31/0725 , H01L31/0735 , C30B29/40 , C30B23/06 , C30B23/02 , C30B33/02 , H01L31/18
CPC分类号： H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≤x≤0.18, 0.025≤y≤0.04 and 0.001≤z≤0.03.
-
公开(公告)号：US20170338357A1
公开(公告)日：2017-11-23
申请号：US15595391
申请日：2017-05-15
IPC分类号： H01L31/0304 , H01L31/0725 , H01L31/0735
CPC分类号： H01L31/03044 , H01L31/03042 , H01L31/03048 , H01L31/0725 , H01L31/0735 , H01L31/078 , Y02E10/544
摘要： Dilute nitride subcells with graded doping are disclosed. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.
-
公开(公告)号：US09627561B2
公开(公告)日：2017-04-18
申请号：US14679297
申请日：2015-04-06
IPC分类号： H01L31/0352 , H01L31/0687 , H01L31/0304 , H01L31/028 , H01L31/18 , H01L31/0693 , H01L21/306
CPC分类号： H01L31/0352 , H01L21/30612 , H01L31/028 , H01L31/0304 , H01L31/03046 , H01L31/03048 , H01L31/0687 , H01L31/0693 , H01L31/1804 , H01L31/184 , H01L31/1844 , H01L31/1848 , H01L31/186 , Y02E10/544 , Y02P70/521
摘要： A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.
-
公开(公告)号：US20140196779A1
公开(公告)日：2014-07-17
申请号：US14213334
申请日：2014-03-14
发明人： ONUR FIDANER , MICHAEL WEST WIEMER
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/02245 , H01L31/0687 , H01L31/0725 , H01L31/076 , H01L31/18 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： Multi junction solar cells and methods for making multi junction solar cells are disclosed. Back-contact-only multi junction solar cells wherein the side facing the sun, is capable of withstanding environments for use in space are disclosed.
摘要翻译： 公开了多结太阳能电池和制造多结太阳能电池的方法。 公开了背面接触太阳能电池，其中朝向太阳的一侧能够承受空间使用的环境。
-
公开(公告)号：US20140137930A1
公开(公告)日：2014-05-22
申请号：US14080612
申请日：2013-11-14
IPC分类号： H01L31/0735 , H01L31/18 , H01L31/0725
CPC分类号： H01L31/0735 , H01L31/043 , H01L31/0687 , H01L31/06875 , H01L31/0725 , H01L31/184 , H01L31/1892 , Y02E10/544 , Y02P70/521
摘要： High efficiency multijunction solar cells formed primarily of III-V semiconductor alloys and methods of making high efficiency multijunction solar cells are disclosed.
摘要翻译： 公开了主要由III-V族半导体合金形成的高效率多结太阳能电池和制造高效多结太阳能电池的方法。
-
公开(公告)号：US20130220409A1
公开(公告)日：2013-08-29
申请号：US13854740
申请日：2013-04-01
IPC分类号： H01L31/0304
CPC分类号： H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1−xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1−xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
摘要翻译： 提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物 （N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07 @ x @ 0.18,0.025 @ y @ 0.04和0.001 @ z @ 0.03。
-
公开(公告)号：US20190252568A1
公开(公告)日：2019-08-15
申请号：US16276432
申请日：2019-02-14
发明人： TING LIU , FERRAN SUAREZ , ARSEN SUKIASYAN , AYMERIC MAROS
IPC分类号： H01L31/078 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/078 , H01L31/03048 , H01L31/0352 , H01L31/0687 , H01L31/18 , H01L31/1864
摘要： Semiconductor devices having a high-temperature barrier layer between a III-V material and an underlying substrate are disclosed. The high-temperature barrier layer can minimize or prevent diffusion of arsenic and phosphorous from an overlying layer into the underlying substrate. Dilute nitride-containing multijunction photovoltaic cells incorporating a high-temperature barrier layer exhibit high efficiency.
-
公开(公告)号：US20180366598A1
公开(公告)日：2018-12-20
申请号：US16111104
申请日：2018-08-23
发明人： Ewelina Lucow , Lan Zhang , Sathya Chary , Ferran Suarez
IPC分类号： H01L31/0224 , H01L31/076 , H01L31/0304 , H01L31/18 , H01L31/0725 , H01L31/0687 , H01L31/0216
摘要： This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
-
公开(公告)号：US20170345955A1
公开(公告)日：2017-11-30
申请号：US15498994
申请日：2017-04-27
发明人： Sathya Chary , Ewelina Lucow , Sabeur Siala , Ferran Suarez , Ali Torabi , Lan Zhang
IPC分类号： H01L31/0224 , H01L31/05 , H01L31/0304 , H01L31/0232 , H01L31/047 , H01L31/18 , H01L31/044
CPC分类号： H01L31/022441 , H01L31/02008 , H01L31/02168 , H01L31/02245 , H01L31/02327 , H01L31/03048 , H01L31/044 , H01L31/047 , H01L31/048 , H01L31/0516 , H01L31/0725 , H01L31/186 , H01L31/188 , Y02E10/50
摘要： Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
-
-
-
-
-
-
-
-
-
搜索结果
45 条记录 (耗时 0.02 秒)
