Invention Application
- Patent Title: METHOD OF FABRICATING SEMICONDUCTOR PACKAGE HAVING METAL LAYER
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Application No.: US15584281Application Date: 2017-05-02
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Publication No.: US20170236787A1Publication Date: 2017-08-17
- Inventor: Chih-Hsien Chiu , Hao-Ju Fang , Hsin-Lung Chung , Cho-Hsin Chang , Tsung-Hsien Tsai , Chia-Yang Chen , Chun-Chi Ke
- Applicant: Siliconware Precision Industries Co., Ltd.
- Priority: TW103133886 20140930
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/00 ; H01L21/48 ; H01L25/065 ; H01L21/78 ; H01L23/16 ; H01L23/31 ; H01L21/56 ; H01L21/54

Abstract:
A semiconductor package is provided, including: a substrate having opposing first and second surfaces; a plurality of semiconductor components disposed on and electrically connected to the first surface; an encapsulant encapsulating the first surface and the semiconductor components and having at least one first groove that partitions the substrate into a plurality of package units, each of which has at least one of the semiconductor components; and a metal layer formed on the substrate and the encapsulant and encapsulating a periphery of the package units, with the second surface exposed from the metal layer, wherein the metal layer is formed along a wall surface of the first groove, to form a second groove corresponding in position to the first groove and having a metal surface. Therefore, the package units are isolated and form a multilayer isolated structure, including metal layers and air layers, and are electromagnetically shielded from one another.
Public/Granted literature
Information query
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