- 专利标题: METHOD OF FABRICATING SEMICONDUCTOR PACKAGE HAVING METAL LAYER
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申请号: US15584281申请日: 2017-05-02
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公开(公告)号: US20170236787A1公开(公告)日: 2017-08-17
- 发明人: Chih-Hsien Chiu , Hao-Ju Fang , Hsin-Lung Chung , Cho-Hsin Chang , Tsung-Hsien Tsai , Chia-Yang Chen , Chun-Chi Ke
- 申请人: Siliconware Precision Industries Co., Ltd.
- 优先权: TW103133886 20140930
- 主分类号: H01L23/552
- IPC分类号: H01L23/552 ; H01L23/00 ; H01L21/48 ; H01L25/065 ; H01L21/78 ; H01L23/16 ; H01L23/31 ; H01L21/56 ; H01L21/54
摘要:
A semiconductor package is provided, including: a substrate having opposing first and second surfaces; a plurality of semiconductor components disposed on and electrically connected to the first surface; an encapsulant encapsulating the first surface and the semiconductor components and having at least one first groove that partitions the substrate into a plurality of package units, each of which has at least one of the semiconductor components; and a metal layer formed on the substrate and the encapsulant and encapsulating a periphery of the package units, with the second surface exposed from the metal layer, wherein the metal layer is formed along a wall surface of the first groove, to form a second groove corresponding in position to the first groove and having a metal surface. Therefore, the package units are isolated and form a multilayer isolated structure, including metal layers and air layers, and are electromagnetically shielded from one another.
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