Invention Application
- Patent Title: INCREASED CONTACT AREA FOR FINFETS
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Application No.: US15592597Application Date: 2017-05-11
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Publication No.: US20170250285A1Publication Date: 2017-08-31
- Inventor: Veeraraghavan S. Basker , Chung-Hsun Lin , Zuoguang Liu , Tenko Yamashita , Chun-Chen Yeh
- Applicant: GLOBALFOUNDRIES INC.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L29/417 ; H01L21/311 ; H01L21/8234
Abstract:
This disclosure relates to a fin field effect transistor including a gate structure formed on a fin. Source and drain (S/D) regions are epitaxially grown on the fin adjacent to the gate structure. The S/D regions include a diamond-shaped cross section wherein the diamond-shaped cross section includes: internal sidewalls where the fin was recessed to a reduced height, and an external top portion of the diamond-shaped cross section of the S/D regions. A contact liner is formed over the internal sidewalls and the top portion of the diamond-shaped cross section of the S/D regions; and contacts are formed over the contact liner and over the internal sidewalls and the top portion of the diamond-shaped cross section of the S/D regions.
Public/Granted literature
- US09899525B2 Increased contact area for finFETs Public/Granted day:2018-02-20
Information query
IPC分类:
