- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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申请号: US15074338申请日: 2016-03-18
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公开(公告)号: US20170256588A1公开(公告)日: 2017-09-07
- 发明人: Natsuki FUKUDA , Mutsumi OKAJIMA , Atsushi OGA , Toshiharu TANAKA , Takeshi YAMAGUCHI , Takeshi TAKAGI , Masanori KOMURA
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 主分类号: H01L27/24
- IPC分类号: H01L27/24 ; H01L21/3213 ; H01L21/311 ; H01L21/768
摘要:
A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer insulating film; a first conductive body facing the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part that projects along tops of one of the first insulating films and one of the first conductive films, and a lower surface of the projecting part contacting an upper surface of the one of the first conductive films.
公开/授权文献
- US09768233B1 Semiconductor device and method of manufacturing the same 公开/授权日:2017-09-19