Invention Application
- Patent Title: Method of Manufacturing Semiconductor Devices with Transistor Cells and Semiconductor Device
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Application No.: US15457833Application Date: 2017-03-13
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Publication No.: US20170271446A1Publication Date: 2017-09-21
- Inventor: Ravi Keshav Joshi , Johannes Baumgartl , Oliver Blank , Oliver Hellmund , Martin Poelzl
- Applicant: Infineon Technologies AG
- Priority: DE102016104968.9 20160317
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/08 ; H01L21/78 ; H01L29/78 ; B81B7/00 ; B81C1/00 ; H01L29/40 ; H01L29/10 ; H01L21/683
Abstract:
First reinforcement stripes are formed on a process surface of a base substrate. A first epitaxial layer covering the first reinforcement stripes is formed on the first process surface. Second reinforcement stripes are formed on the first epitaxial layer. A second epitaxial layer covering the second reinforcement stripes is formed on exposed portions of the first epitaxial layer. Semiconducting portions of transistor cells are formed in or portions of micro electromechanical structures are formed from the second epitaxial layer.
Public/Granted literature
- US10121859B2 Method of manufacturing semiconductor devices with transistor cells and semiconductor device Public/Granted day:2018-11-06
Information query
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