发明申请
- 专利标题： SUPER-JUNCTION SEMICONDUCTOR POWER DEVICES WITH FAST SWITCHING CAPABILITY
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申请号： US15077579申请日： 2016-03-22
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公开(公告)号： US20170278924A1公开(公告)日： 2017-09-28
- 发明人: Alexander Viktorovich Bolotnikov , Peter Almern Losee , David Alan Lilienfeld , Reza Ghandi
- 申请人： General Electric Company
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L21/04 ; H01L29/808 ; H01L29/73 ; H01L29/78 ; H01L29/16 ; H01L29/861
摘要：
A super junction (SJ) device may include one or more charge balance (CB) layers. Each CB layer may include an epitaxial (epi) layer having a first conductivity type and a plurality of charge balance (CB) regions having a second conductivity type. Additionally, the SJ device may include a connection region having the second conductivity type that extends from a region disposed in a top surface of a device layer of the SJ device to one or more of the CB regions. The connection region may enable carriers to flow directly from the region to the one or more CB regions, which may decrease switching losses of the SJ device.
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