Invention Application
- Patent Title: Uniform Layers Formed with Aspect Ratio Trench Based Processes
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Application No.: US15528793Application Date: 2014-12-23
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Publication No.: US20170317187A1Publication Date: 2017-11-02
- Inventor: Sanaz K. GARDNER , Willy RACHMADY , Matthew V. METZ , Gilbert DEWEY , Jack T. KAVALIEROS , Chandra S. MOHAPATRA , Anand S. MURTHY , Nadia RAHHAL-ORABI , Nancy M. ZELICK , Marc C. FRENCH , Tahir GHANI
- Applicant: INTEL CORPORATION
- International Application: PCT/US2014/072143 WO 20141223
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/786 ; H01L29/423 ; H01L29/06 ; H01L27/088 ; H01L21/8234 ; H01L21/02

Abstract:
An embodiment includes a device comprising: first and second fins adjacent one another and each including channel and subfin layers, the channel layers having bottom surfaces directly contacting upper surfaces of the subfin layers; wherein (a) the bottom surfaces are generally coplanar with one another and are generally flat; (b) the upper surfaces are generally coplanar with one another and are generally flat; and (c) the channel layers include an upper material and the subfin layers include a lower III-V material different from the upper III-V material. Other embodiments are described herein.
Information query
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