A Schottky barrier diode according to an exemplary embodiment of the present disclosure includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate, wherein the p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.