公开(公告)号：US20180166538A1

公开(公告)日：2018-06-14

申请号：US15631993

申请日：2017-06-23

Applicant: Hyundai Motor Company ,  Kia Motors Corporation

Inventor： NackYong JOO ,  Youngkyun JUNG ,  Junghee PARK ,  JongSeok LEE ,  Dae Hwan CHUN

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/1608 ,  H01L29/4236 ,  H01L29/66015 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L29/7827

Abstract: A semiconductor device may include an n− type layer sequentially disposed at a first surface of an n+ type silicon carbide substrate; a p type region disposed in the n− type layer; an auxiliary n+ type region disposed on the p type region or in the p type region; an n+ type region disposed in the p type region; an auxiliary electrode disposed on the auxiliary n+ type region and the p type region; a gate electrode separated from the auxiliary electrode and disposed on the n− type layer; a source electrode separated from the auxiliary electrode and the gate electrode; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate, wherein the auxiliary n+ type region and the n+ type region are separated from each other, and the source electrode is in contact with the n+ type region.

公开(公告)号：US20180012991A1

公开(公告)日：2018-01-11

申请号：US15348613

申请日：2016-11-10

Applicant: HYUNDAI MOTOR COMPANY

Inventor： NackYong JOO ,  Youngkyun JUNG ,  Junghee PARK ,  JongSeok LEE ,  Dae Hwan CHUN

IPC: H01L29/78 ,  H01L29/45 ,  H01L21/265 ,  H01L29/16 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/7813 ,  H01L21/047 ,  H01L21/26586 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/4916 ,  H01L29/66068

Abstract: A semiconductor device includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench formed in the n− type layer and separated from each other; an n+ type region disposed between a side surface of the first trench and the side surface of the second trench and disposed on the n− type layer; a gate insulating layer disposed inside the first trench; a source insulating layer disposed inside the second trench; a gate electrode disposed on the gate insulating layer; an oxide layer disposed on the gate electrode; a source electrode disposed on the oxide layer, the n+ type region, and the source insulating layer; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate.

公开(公告)号：US20180013014A1

公开(公告)日：2018-01-11

申请号：US15374468

申请日：2016-12-09

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Dae Hwan CHUN ,  Youngkyun JUNG ,  Nack Yong JOO ,  Junghee PARK ,  Jong Seok LEE

IPC: H01L29/872 ,  H01L29/08 ,  H01L21/04 ,  H01L29/06 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/872 ,  H01L21/046 ,  H01L29/0619 ,  H01L29/0688 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/08 ,  H01L29/1608 ,  H01L29/6606

Abstract: A Schottky barrier diode according to an exemplary embodiment of the present disclosure includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate, wherein the p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.

公开(公告)号：US20160172483A1

公开(公告)日：2016-06-16

申请号：US14853459

申请日：2015-09-14

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Dae Hwan CHUN ,  Jong Seok LEE ,  Junghee PARK ,  Kyoung-Kook HONG ,  Youngkyun JUNG

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66719

Abstract: The present inventive concept relates to a semiconductor device, and more particularly to a semiconductor device that can increase the amount of current by reducing impedance, and a method of manufacturing the semiconductor device.A semiconductor device comprises an n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; an n+ region disposed on the n− type epitaxial layer; first and second trenches disposed in the n− type epitaxial layer and the n+ region; first and second gate insulating layers disposed inside the first and second trenches, respectively; first and second gate electrodes disposed on the first and second gate insulating layers, respectively; a p-type region disposed on two sides of one of the first and second trenches; an oxidation film diposed on the first and second gate electrodes; a source electrode disposed on the n+ region and the oxidation film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein a first channel is disposed on two sides of the first trench and a second channel is disposed on two sides of the second trench.

Abstract translation: 本发明构思涉及一种半导体器件，更具体地，涉及一种可以通过减少阻抗来增加电流量的半导体器件，以及制造半导体器件的方法。 半导体器件包括设置在n +型碳化硅衬底的第一表面上的n型外延层; 设置在n型外延层上的n +区; 设置在n型外延层和n +区域中的第一和第二沟槽; 分别设置在第一和第二沟槽内的第一和第二栅极绝缘层; 分别设置在第一和第二栅极绝缘层上的第一和第二栅极电极; 设置在所述第一和第二沟槽中的一个的两侧上的p型区域; 浸渍在第一和第二栅电极上的氧化膜; 设置在n +区域上的源电极和氧化膜; 以及设置在所述n +型碳化硅衬底的第二表面上的漏电极，其中第一通道设置在所述第一沟槽的两侧，而第二沟道设置在所述第二沟槽的两侧。

公开(公告)号：US20250006843A1

公开(公告)日：2025-01-02

申请号：US18517723

申请日：2023-11-22

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： Dae Hwan CHUN ,  Junghee PARK ,  Jungyeop HONG ,  Taehyun KIM ,  Youngkyun JUNG ,  NackYong JOO

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, a buffer layer on the substrate, an n− type epitaxial layer extending upward from the buffer layer in one direction, and having a fin channel, a p type layer disposed on the buffer layer and surrounding the side and upper surfaces of the n− type epitaxial layer, a gate insulating layer on the p type layer, and a gate electrode on the gate insulating layer.

公开(公告)号：US20240395923A1

公开(公告)日：2024-11-28

申请号：US18529864

申请日：2023-12-05

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： Dae Hwan CHUN ,  Junghee PARK ,  Jungyeop HONG ,  Taehyun KIM ,  Youngkyun JUNG ,  NackYong JOO

IPC: H01L29/778 ,  H01L23/31 ,  H01L29/24 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

Abstract: Provided are a semiconductor device and a method of manufacturing the same, the semiconductor device including a substrate, a buffer layer on the substrate, an n-type epitaxial layer on the buffer layer, a protective layer on the n-type epitaxial layer, a p type layer disposed in a trench structure on the protective layer, and penetrating the protective layer and within the n-type epitaxial layer, a gate insulating layer on the p type layer, and a gate electrode on the gate insulating layer.

公开(公告)号：US20230207683A1

公开(公告)日：2023-06-29

申请号：US17748016

申请日：2022-05-18

Applicant: HYUNDAI MOTOR COMPANY ,  KIA CORPORATION

Inventor： Junghee PARK ,  Dae Hwan CHUN ,  Jungyeop HONG ,  Youngkyun JUNG ,  NackYong JOO

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L21/266 ,  H01L21/26586 ,  H01L29/66734

Abstract: A method for manufacturing a semiconductor device includes forming an N- type layer on the first surface of the N+ type substrate, etching the N- type layer to form a trench, forming a sacrificial layer on an inner bottom surface of the trench, forming a first mask on an inner side of the trench, removing the sacrificial layer, and forming a P type shield region by implanting ions into an inner surface of the trench exposed by the removal of the sacrificial layer.

公开(公告)号：US20180122911A1

公开(公告)日：2018-05-03

申请号：US15372078

申请日：2016-12-07

Applicant: HYUNDAI MOTOR COMPANY

Inventor： NackYong JOO ,  Youngkyun JUNG ,  Junghee PARK ,  JongSeok LEE ,  Dae Hwan CHUN

IPC: H01L29/40 ,  H01L29/06 ,  H01L21/761 ,  H01L21/765 ,  H01L29/16

CPC classification number: H01L29/402 ,  H01L21/761 ,  H01L21/765 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7838 ,  H01L29/861 ,  H01L29/872

Abstract: A semiconductor device according to an exemplary embodiment of the present invention includes: a current applying region; and a termination region disposed at an end portion of the current applying region. The termination region includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p type termination structure disposed in the n− type layer; and a lower gate runner disposed on the p type termination structure such that the lower gate runner overlaps the p type termination structure.

公开(公告)号：US20170170310A1

公开(公告)日：2017-06-15

申请号：US15165912

申请日：2016-05-26

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Dae Hwan CHUN ,  Youngkyun JUNG ,  NackYong JOO ,  Junghee PARK ,  JongSeok LEE

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/04 ,  H01L29/16

CPC classification number: H01L29/7806 ,  H01L21/047 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/872

Abstract: A semiconductor device includes an n− type layer disposed in a first surface of an n+ type silicon carbide substrate, a first trench and a second trench disposed in the n− type layer and spaced apart from each other, a p type region surrounding a lateral surface and a corner of the first trench, an n+ type region disposed on the p type region and the n− type layer between the first trench and the second trench, a gate insulating layer disposed in the second trench, a gate electrode disposed on the gate insulating layer, an oxide layer disposed on the gate electrode, a source electrode disposed on the oxide layer and the n+ type region, and disposed in the first trench, and a drain electrode disposed in a second surface of the n+ type silicon carbide substrate, wherein the source electrode contacts the n− type layer.

公开(公告)号：US20170170275A1

公开(公告)日：2017-06-15

申请号：US15342363

申请日：2016-11-03

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Dae Hwan CHUN ,  Youngkyun JUNG ,  Nack Yong JOO ,  Junghee PARK ,  Jong Seok LEE

IPC: H01L29/08 ,  H01L29/06 ,  H01L29/78 ,  H01L29/16

CPC classification number: H01L29/0847 ,  H01L29/0619 ,  H01L29/0684 ,  H01L29/1608 ,  H01L29/78 ,  H01L29/7828

Abstract: A semiconductor device includes a first n− type layer and a second n− type layer that are sequentially disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench that are disposed at the second n− type layer and are spaced apart from each other; a p type region surrounding a lateral surface and a lower surface of the first trench; an n+ type region disposed on the p type region and the second n− type layer; a gate insulating layer disposed in the second trench; a gate electrode disposed on the gate insulating layer; an oxide layer disposed on the gate electrode; a source electrode disposed on the oxide layer and the n+ type region disposed in the first trench; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate.