- 专利标题： THREE-DIMENSIONAL MEMORY DEVICE CONTAINING COMPOSITE WORD LINES INCLUDING A METAL SILICIDE AND AN ELEMENTAL METAL AND METHOD OF MAKING THEREOF
-
申请号： US15730045申请日： 2017-10-11
-
公开(公告)号： US20180033646A1公开(公告)日： 2018-02-01
- 发明人: Rahul SHARANGPANI , Fumitaka AMANO , Raghuveer S. MAKALA , Adarsh RAJASHEKHAR , Fei ZHOU
- 申请人： SANDISK TECHNOLOGIES LLC
- 主分类号： H01L21/443
- IPC分类号： H01L21/443 ; H01L21/3065 ; H01L27/108 ; H01L21/311 ; H01L27/06 ; H01L21/768 ; H01L21/441 ; H01L29/49 ; H01L27/105
摘要：
Word lines for a three-dimensional memory device can be formed by forming a stack of alternating layers comprising insulating layers and sacrificial material layers and memory stack structures vertically extending therethrough. Backside recesses are formed by removing the sacrificial material layers through a backside via trench. A metal silicide layer and metal portion are formed in the backside recesses to form the word lines including a metal portion, a metal silicide layer, and optionally, a silicon-containing layer.
公开/授权文献
信息查询
IPC分类:
