- 专利标题: HIGH DENSITY, LOW STRESS AMORPHOUS CARBON FILM, AND PROCESS AND EQUIPMENT FOR ITS DEPOSITION
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申请号: US15600247申请日: 2017-05-19
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公开(公告)号: US20180051368A1公开(公告)日: 2018-02-22
- 发明人: Jingjing Liu , Zhong Qiang Hua , Adolph Miller Allen , Michael W. Stowell , Srinivas D. Nemani , Chentsau Ying , Bhargav Citla , Viachslav Babayan , Andrej Halabica
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: C23C14/06
- IPC分类号: C23C14/06 ; C23C14/35 ; C23C14/34 ; C23C14/54 ; H01J37/34 ; H01L21/02
摘要:
A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.
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