公开(公告)号：US11049701B2

公开(公告)日：2021-06-29

申请号：US15823176

申请日：2017-11-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Adolph Miller Allen ,  William Johanson ,  Viachslav Babayan ,  Zhong Qiang Hua ,  Carl R. Johnson ,  Vanessa Faune ,  Jingjing Liu ,  Vaibhav Soni ,  Kirankumar Savandaiah ,  Sundarapandian Ramalinga Vijayalaks Reddy

IPC: H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C16/458 ,  H01J37/02

Abstract: Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.

公开(公告)号：US10566177B2

公开(公告)日：2020-02-18

申请号：US15349433

申请日：2016-11-11

Applicant: Applied Materials, Inc.

Inventor： Michael Stowell ,  Viachslav Babayan ,  Jingjing Liu ,  Zhong Qiang Hua

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  H01L21/683

Abstract: Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.

公开(公告)号：US20170154797A1

公开(公告)日：2017-06-01

申请号：US14989488

申请日：2016-01-06

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, JR. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: H01L21/67 ,  G03F7/20

CPC classification number: G03F7/2035 ,  G03F7/168 ,  G03F7/26 ,  G03F7/38 ,  H01L21/68764

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US11262662B2

公开(公告)日：2022-03-01

申请号：US17062326

申请日：2020-10-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Ludovic Godet ,  Kyle M. Hanson ,  Robert B. Moore

IPC: G03F7/20 ,  G03F7/38 ,  H01L21/67

Abstract: Implementations described herein relate to a platform apparatus for post exposure processing. In one implementation, a platform apparatus includes a plumbing module and a process module. The process module further includes a central region having a robot disposed therein, and a plurality of process stations disposed about the central region and sharing the plumbing module. Each process station includes a process chamber and a post process chamber in a stacked arrangement. The process chamber includes a chamber body defining a process volume, a door coupled to the chamber body, a first electrode coupled to the door, and a power source communicatively coupled to the first electrode.

公开(公告)号：US11112697B2

公开(公告)日：2021-09-07

申请号：US16272962

申请日：2019-02-11

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: H01L21/67 ,  H01L21/687 ,  G03F7/20 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US09865484B1

公开(公告)日：2018-01-09

申请号：US15197060

申请日：2016-06-29

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Chentsau Ying ,  Srinivas Nemani ,  Viachslav Babayan ,  Michael Stowell

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/67069 ,  H01J37/32146 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

Abstract: Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.

公开(公告)号：US20180005850A1

公开(公告)日：2018-01-04

申请号：US15197060

申请日：2016-06-29

Applicant: Applied Materials, Inc.

Inventor： Bhargav Citla ,  Chentsau Ying ,  Srinivas Nemani ,  Viachslav Babayan ,  Michael Stowell

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/3115 ,  H01L21/687 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01J37/32146 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3115 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

Abstract: Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.

公开(公告)号：US11550224B2

公开(公告)日：2023-01-10

申请号：US17001399

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Kyle M. Hanson ,  Gregory J. Wilson ,  Viachslav Babayan

IPC: G03F7/38 ,  C23C16/56 ,  H01L21/67 ,  C23C16/54 ,  H01L21/677

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A post process chamber for rinsing, developing, and drying a substrate is also provided.

公开(公告)号：US10754252B2

公开(公告)日：2020-08-25

申请号：US15844137

申请日：2017-12-15

Applicant: Applied Materials, Inc.

Inventor： Kyle M. Hanson ,  Gregory J. Wilson ,  Viachslav Babayan

IPC: G03F7/38 ,  H01L21/67 ,  C23C16/54 ,  C23C16/56 ,  H01L21/677

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. In one embodiment, a major axis of the processing volume is oriented vertically and a minor axis of the processing volume is oriented horizontally. One or more electrodes may be disposed adjacent the processing volume and at least partially define the processing volume. Process fluid is provided to the processing volume via a plurality of fluid conduits to facilitate immersion field guided post exposure bake processes. A plurality of seals maintains the fluid containment integrity of the processing volume during processing. A post process chamber for rinsing, developing, and drying a substrate is also provided.

公开(公告)号：US10401742B2

公开(公告)日：2019-09-03

申请号：US15947409

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Ludovic Godet ,  Kyle M. Hanson ,  Robert B. Moore

IPC: G03F7/20 ,  G03F7/38 ,  H01L21/67

Abstract: Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. In one implementation, a plurality of post exposure process chamber and cool/down development chamber pairs are positioned on a process platform in a stacked arrangement and utilize a shared plumbing module. In another implementation, a plurality of post exposure process chamber and cool down/development chambers are positioned on a process platform in a linear arrangement and each of the chambers utilize an individually dedicated plumbing module.