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    Apparatus and methods for spacer deposition and selective removal in an advanced patterning process
    4.
    发明授权
    Apparatus and methods for spacer deposition and selective removal in an advanced patterning process 有权
    在先进的图案化工艺中用于间隔物沉积和选择性去除的装置和方法

    公开(公告)号：US09484202B1

    公开(公告)日：2016-11-01

    申请号：US14729932

    申请日：2015-06-03

    Applicant: Applied Materials, Inc.

    Inventor： Jie Zhou ,  Chentsau Ying ,  Shambhu N. Roy ,  Srinivas D. Nemani ,  Jingjing Liu ,  Ellie Y. Yieh

    IPC: H01L21/302 ,  H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/311 ,  H01L21/0337

    Abstract: Embodiments herein provide apparatus and methods for performing a deposition and a patterning process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for depositing and patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has a first group of openings defined therebetween, selectively treating a first portion of the spacer layer formed on the substrate without treating a second portion of the spacer layer, and selectively removing the treated first portion of the spacer layer.

    Abstract translation: 本文的实施例提供了用于在多个图案化工艺中对具有良好轮廓控制的间隔层执行沉积和图案化工艺的装置和方法。 在一个实施例中，在多次图案化工艺期间用于沉积和图案化间隔层的方法包括在设置在衬底上的图案化结构的外表面上共形形成间隔层，其中图案化结构具有限定在其间的第一组开口， 选择性地处理形成在衬底上的间隔层的第一部分，而不处理间隔层的第二部分，并且选择性地去除间隔层的经处理的第一部分。

    PULSED DC PLASMA ETCHING PROCESS AND APPARATUS
    7.
    发明申请
    PULSED DC PLASMA ETCHING PROCESS AND APPARATUS 审中-公开
    脉冲直流等离子体蚀刻工艺和设备

    公开(公告)号：US20140273487A1

    公开(公告)日：2014-09-18

    申请号：US14200779

    申请日：2014-03-07

    Applicant: Applied Materials, Inc.

    Inventor： Subhash Deshmukh ,  He Ren ,  Jingjing Liu

    IPC: H01L21/3065 ,  H01L21/67

    CPC classification number: H01J37/32146 ,  H01J37/32091 ,  H01J37/32706 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68742 ,  H01L21/6875

    Abstract: In one aspect, a plasma etching apparatus is disclosed. The plasma etching apparatus includes a chamber body having a process chamber adapted to receive a substrate, an RF source coupled to an RF electrode, a pedestal located in the processing chamber and adapted to support a substrate, a plurality of conductive pins adapted to contact and support the substrate during processing, and a DC bias source electrically coupled to the plurality of conductive pins. Etching methods are provided, as are numerous other aspects.

    Abstract translation: 一方面，公开了一种等离子体蚀刻装置。 等离子体蚀刻装置包括具有适于接纳基板的处理室的室主体，耦合到RF电极的RF源，位于处理室中的基座，并适于支撑基板，多个导电引脚适于接触和 在处理期间支撑衬底，以及电耦合到多个导电引脚的DC偏压源。 提供了蚀刻方法，以及许多其它方面。

    High temperature tungsten metallization process
    8.
    发明授权
    High temperature tungsten metallization process 失效
    高温钨金属化工艺

    公开(公告)号：US08617985B2

    公开(公告)日：2013-12-31

    申请号：US13660463

    申请日：2012-10-25

    Applicant: Applied Materials, Inc.

    Inventor： Joshua Collins ,  Murali K. Narasimhan ,  Jingjing Liu ,  Sang-Hyeob Lee ,  Kai Wu ,  Avgerinos V. Gelatos

    IPC: H01L21/44

    CPC classification number: H01L21/76876 ,  H01L21/743 ,  H01L21/76814 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53266 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

    Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层 含有氮化钨和碳。 该方法还包括在热退火过程中（例如，从约700℃至小于1000℃的温度）通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料） ）。 随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。

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