Invention Application
- Patent Title: LITHOGRAPHIC METHOD
-
Application No.: US15789702Application Date: 2017-10-20
-
Publication No.: US20180081278A1Publication Date: 2018-03-22
- Inventor: Andrey Alexandrovich NIKIPELOV , Olav Waldemar Vladimir FRIJNS , Gosse Charles DE VRIES , Erik Roelof LOOPSTRA , Vadim Yevgenyevich BANINE , Pieter Willem Herman DE JAGER , Rilpho Ludovicus DONKER , Han-Kwang NIENHUYS , Borgert KRUIZINGA , Wouter Joep ENGELEN , Otger Jan LUITEN , Johannes Antonius Gerardus AKKERMANS , Leonardus Adrianus Gerardus GRIMMINCK , Vladimir LITVINENKO
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Priority: EP14152443.9 20140124; EP14164037.5 20140409; EP14169803.5 20140526; EP14171782.7 20140610
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G01J1/04
Abstract:
A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
Public/Granted literature
- US10437154B2 Lithographic method Public/Granted day:2019-10-08
Information query
IPC分类:
