DIFFRACTION GRATING FOR MEASUREMENTS IN EUV-EXPOSURE APPARATUSES

    公开(公告)号:US20240385356A1

    公开(公告)日:2024-11-21

    申请号:US18559942

    申请日:2022-04-28

    Abstract: Diffraction gratings for a phase-stepping measurement system for determining an aberration map for a projection system are disclosed. The gratings are two-dimensional diffraction gratings for use as wafer level gratings in an EUV lithographic apparatus. In particular, the diffraction gratings include a substrate provided with a two-dimensional array of circular through-apertures and are self-supporting. In some embodiments, a ratio of the radius of the circular apertures to the distance between the centers of adjacent apertures may be selected to minimize the gain and cross-talk errors of a wavefront reconstruction algorithm. For example, the ratio may be between 0.34 and 0.38. In some embodiments, the circular apertures are distributed such that a distance between the centers of adjacent apertures is non-uniform and varies across the diffraction grating. For example, a local pitch of the grating may vary randomly across the diffraction grating.

    Electron Source for a Free Electron Laser
    8.
    发明申请

    公开(公告)号:US20190035594A1

    公开(公告)日:2019-01-31

    申请号:US16072385

    申请日:2017-02-07

    CPC classification number: H01J37/073 H01J2237/063 H01S3/0903 H05H2007/084

    Abstract: An electron source, e.g. for a free electron laser used for EUV lithography comprises: a cathode (203) configured to be connected to a negative potential (100, 101); a laser (110) configured to direct pulses of radiation onto the cathode so as to cause the cathode to emit bunches of electrons; an RF booster (180) connected to an RF source and configured to accelerate the bunches of electrons; and a timing corrector (303, 313, 400, 401) configured to correct the time of arrival of bunches of electrons at the RF booster relative to the RF voltage provided by the RF source. The timing corrector may comprise a correction electrode (303, 313) surrounding a path of the bunches of electrons from the cathode to the RF booster and a correction voltage source (400, 401) configured to apply a correction voltage to the correction electrode.

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