Invention Application
- Patent Title: SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
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Application No.: US15825779Application Date: 2017-11-29
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Publication No.: US20180082831A1Publication Date: 2018-03-22
- Inventor: Koji KAGAWA , Hisashi KAWANO , Meitoku AIBARA , Yuki YOSHIDA
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2015-157731 20150807
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67

Abstract:
In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.
Public/Granted literature
- US10121646B2 Substrate processing apparatus and substrate processing method Public/Granted day:2018-11-06
Information query
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