公开(公告)号：US20170345685A1

公开(公告)日：2017-11-30

申请号：US15599067

申请日：2017-05-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenji SEKIGUCHI ,  Itaru KANNO ,  Meitoku AIBARA ,  Kouzou TACHIBANA

IPC: H01L21/67 ,  B08B3/04 ,  B08B7/00 ,  H01L21/02

Abstract: A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the substrate, supplying, to the processing film formed on the substrate, a peeling processing liquid that peels off the processing film from the substrate and includes a non-polar solvent, and supplying, to the processing film, a dissolution processing liquid that dissolves the processing film and includes a polar solvent after the supplying of the peeling processing liquid. The non-polar solvent does not contain water, and the polar solvent does not contain water.

公开(公告)号：US20150128994A1

公开(公告)日：2015-05-14

申请号：US14539174

申请日：2014-11-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Keiji TANOUCHI ,  Takehiko ORII ,  Itaru KANNO ,  Meitoku AIBARA ,  Satoru TANAKA

IPC: H01L21/02 ,  B08B3/02 ,  B08B3/08 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/0206 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

Abstract translation: 一种清洗基板的方法包括向基板供给包含挥发性成分的成膜处理液，在基板上形成膜，使成膜处理液中的挥发成分蒸发，使成膜处理液凝固 或固化在基板上，在基板上形成处理膜，向具有处理膜的基板供给从基板剥离处理膜的剥离处理液，向基板上形成的处理膜供给溶解处理 在提供带状处理液体之后溶解处理膜的液体。

公开(公告)号：US20180082831A1

公开(公告)日：2018-03-22

申请号：US15825779

申请日：2017-11-29

Applicant: Tokyo Electron Limited

Inventor： Koji KAGAWA ,  Hisashi KAWANO ,  Meitoku AIBARA ,  Yuki YOSHIDA

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0206 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67248

Abstract: In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.

公开(公告)号：US20170040154A1

公开(公告)日：2017-02-09

申请号：US15226396

申请日：2016-08-02

Applicant: Tokyo Electron Limited

Inventor： Koji KAGAWA ,  Hisashi KAWANO ,  Meitoku AIBARA ,  Yuki YOSHIDA

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/0206 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67248

Abstract: In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.

Abstract translation: 为了从形成在基板的表面上的具有凹凸图案的基板上除去填充有凹凸图案的凹部的固体材料，并且通过使可升华物质溶液中的溶剂蒸发而形成 含有在等于或高于第一温度的温度升华的升华物质和在等于或高于第一温度的第二温度下蒸发的杂质，本发明提供了一种基板处理装置 以及将基板加热到等于或高于第二温度的温度的基板处理方法。

公开(公告)号：US20220277968A1

公开(公告)日：2022-09-01

申请号：US17745998

申请日：2022-05-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Miyako KANEKO ,  Keiji TANOUCHI ,  Takehiko ORII ,  Itaru KANNO ,  Meitoku AIBARA ,  Satoru TANAKA

IPC: H01L21/67 ,  H01L21/02

Abstract: A method for cleaning a substrate includes supplying, to a substrate which does not have a resist formed thereon, a film-forming processing liquid which includes a volatile component and forms a processing film, volatilizing the volatile component of the film-forming processing liquid such that the film-forming processing liquid on the substrate is solidified or cured and that the processing film is formed on the substrate, heating a peeling processing liquid which peels off the processing film from the substrate without dissolving the processing film such that a heated peeling processing liquid is prepared, and supplying, to the processing film formed on the substrate, the heated peeling processing liquid such that the heated peeling processing liquid peels off the processing film from the substrate without dissolving the processing film.

公开(公告)号：US20210265180A1

公开(公告)日：2021-08-26

申请号：US17255029

申请日：2019-06-13

Applicant: Tokyo Electron Limited

Inventor： Meitoku AIBARA

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate cleaning method according to an aspect of the present disclosure includes: supplying a film-forming treatment liquid containing a volatile component to a substrate to form a film on the substrate; supplying a peeling treatment liquid, which peels off a treatment film from the substrate, to the treatment film formed by solidifying or curing the film-forming treatment liquid on the substrate due to volatilization of the volatile component; and supplying a hydrophobic liquid, which hydrophobizes the substrate, to the substrate to which the peeling treatment liquid has been supplied.

公开(公告)号：US20190118227A1

公开(公告)日：2019-04-25

申请号：US16215958

申请日：2018-12-11

Applicant: Tokyo Electron Limited

Inventor： Meitoku AIBARA ,  Yuki Yoshida ,  Hisashi Kawano ,  Masami Yamashita ,  Itaru Kanno ,  Kenji Mochida ,  Motoyuki Shima

IPC: B08B3/08 ,  H01L21/02 ,  H01L21/67

Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

公开(公告)号：US20160035564A1

公开(公告)日：2016-02-04

申请号：US14809373

申请日：2015-07-27

Applicant: TOKYO ELECTRON LIMITED ,  JSR CORPORATION

Inventor： Meitoku AIBARA ,  Yuki YOSHIDA ,  Hisashi KAWANO ,  Masami YAMASHITA ,  Itaru KANNO ,  Kenji MOCHIDA ,  Motoyuki SHIMA

IPC: H01L21/02 ,  B08B3/08

CPC classification number: H01L21/02057 ,  B08B3/08 ,  H01L21/02041 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6715

Abstract: An object of the present invention is to be able to obtain a high removing performance of particles. The substrate processing method according to the exemplary embodiment comprises a film-forming treatment solution supply step and a removing solution supply step. The film-forming treatment solution supply step comprising supplying to a substrate, a film-forming treatment solution containing an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent is supplied. The removing solution supply step comprises supplying to a treatment film formed by solidification or curing of the film-forming treatment solution on the substrate, a removing solution capable of removing the treatment film.

Abstract translation: 本发明的目的是能够获得颗粒的高去除性能。 根据示例性实施例的基板处理方法包括成膜处理溶液供应步骤和去除溶液供应步骤。 提供成膜处理溶液供应步骤，其包括供给基材，含有有机溶剂的成膜处理溶液和可溶于有机溶剂的含氟聚合物。 去除溶液供给步骤包括向通过基板上的成膜处理溶液的固化或固化形成的处理膜提供能够除去处理膜的去除溶液。

公开(公告)号：US20160035561A1

公开(公告)日：2016-02-04

申请号：US14809387

申请日：2015-07-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Meitoku AIBARA ,  Yuki YOSHIDA ,  Hisashi KAWANO ,  Masami YAMASHITA ,  Itaru KANNO ,  Kenji MOCHIDA ,  Motoyuki SHIMA

IPC: H01L21/02 ,  B08B3/08

CPC classification number: B08B3/08 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6715

Abstract: An object of the present invention is to obtain a high removing performance of particles. The substrate processing system according to the exemplary embodiment comprises a holding unit and a removing solution supply unit. The holding unit holds a substrate that has a treatment film formed thereon, wherein the treatment film comprises an organic solvent and a fluorine-containing polymer that is soluble in the organic solvent. The removing solution supply unit supplies to the treatment film formed on the substrate, a removing solution capable of removing the treatment film.

Abstract translation: 本发明的目的是获得颗粒的高去除性能。 根据示例性实施例的基板处理系统包括保持单元和去除溶液供应单元。 保持单元保持其上形成有处理膜的基板，其中处理膜包括可溶于有机溶剂的有机溶剂和含氟聚合物。 除去溶液供给单元供给到在基板上形成的处理膜，能够除去处理膜的除去溶液。