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公开(公告)号：US20220316059A1
公开(公告)日：2022-10-06
申请号：US17628682
申请日：2020-07-13
Applicant: Tokyo Electron Limited
Inventor： Koukichi HIROSHIRO , Makoto MURAMATSU , Koji KAGAWA , Kenji SEKIGUCHI
IPC: C23C16/455 , C23C16/458 , C23C16/46
Abstract: A substrate processing method includes a protective film forming step, an insulating material depositing step, a protective film removing step, and a metal material depositing step. In the protective film forming step, a protective film is formed on a metal film among the metal film and an insulating film exposed on the surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film. In the insulating material depositing step, after the protective film forming step, an insulating material is deposited on the surface of the insulating film using an atomic layer deposition method. In the protective film removing step, the protective film is removed from the surface of the metal film after the insulating material depositing step. In the metal material depositing step, a metal material is deposited on the metal film after the protective film removing step.
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公开(公告)号：US20220301880A1
公开(公告)日：2022-09-22
申请号：US17690709
申请日：2022-03-09
Applicant: TOKYO ELECTRON LIMITED
Inventor： Atsushi YAMASHITA , Koji KAGAWA
IPC: H01L21/311 , H01L21/02 , B08B3/08 , B08B13/00 , F26B5/00
Abstract: A substrate processing method includes: a preparing process of preparing a substrate in which a zirconium oxide film as a mask has been formed on a laminated film and dry-etched into a given shape; after the preparing process, a mask removing process of removing the zirconium oxide film by supplying a mask removing liquid containing sulfuric acid as a main component to the substrate; and after the mask removing process, a drying process of drying a surface of the substrate that is wet with a rinsing liquid.
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公开(公告)号：US20210257209A1
公开(公告)日：2021-08-19
申请号：US16973554
申请日：2019-06-04
Applicant: Tokyo Electron Limited
Inventor： Koji KAGAWA
IPC: H01L21/02 , H01L21/67 , H01L21/687 , C23F1/26 , B08B3/08
Abstract: A substrate treatment method according to an embodiment of the present disclosure includes a temperature raising step of raising a temperature of a concentrated sulfuric acid, and a liquid supply step of supplying the concentrated sulfuric acid having the raised temperature to a substrate placed on a substrate processing part.
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公开(公告)号：US20180082831A1
公开(公告)日：2018-03-22
申请号：US15825779
申请日：2017-11-29
Applicant: Tokyo Electron Limited
Inventor： Koji KAGAWA , Hisashi KAWANO , Meitoku AIBARA , Yuki YOSHIDA
CPC classification number: H01L21/0206 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67248
Abstract: In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.
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Patent Agency Ranking
公开(公告)号：US20170040154A1
公开(公告)日：2017-02-09
申请号：US15226396
申请日：2016-08-02
Applicant: Tokyo Electron Limited
Inventor： Koji KAGAWA , Hisashi KAWANO , Meitoku AIBARA , Yuki YOSHIDA
CPC classification number: H01L21/0206 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67248
Abstract: In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.
Abstract translation: 为了从形成在基板的表面上的具有凹凸图案的基板上除去填充有凹凸图案的凹部的固体材料，并且通过使可升华物质溶液中的溶剂蒸发而形成 含有在等于或高于第一温度的温度升华的升华物质和在等于或高于第一温度的第二温度下蒸发的杂质，本发明提供了一种基板处理装置 以及将基板加热到等于或高于第二温度的温度的基板处理方法。
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公开(公告)号：US20240307821A1
公开(公告)日：2024-09-19
申请号：US18576898
申请日：2022-06-22
Applicant: Tokyo Electron Limited
Inventor： Yosuke HACHIYA , Mitsunori NAKAMORI , Koji KAGAWA
Abstract: A substrate processing system includes a batch processor, a single-substrate processor, and a transferrer. The batch processor collectively processes a plurality of substrates by immersing the plurality of substrates in ozonated water stored in a processing tank. The single-substrate processor processes the plurality of substrates one by one with a chemical liquid. The transferrer transfers the plurality of substrates in a wet state from the batch processor to the single-substrate processor.
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公开(公告)号：US20240128307A1
公开(公告)日：2024-04-18
申请号：US18275908
申请日：2022-01-31
Applicant: Tokyo Electron Limited
Inventor： Rintaro HIGUCHI , Mitsunori NAKAMORI , Koji KAGAWA , Kenji SEKIGUCHI , Hajime NAKABAYASHI , Syuhei YONEZAWA
CPC classification number: H01L28/40 , C23C16/34 , C23C16/403 , C23C16/405 , C23C16/56
Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.
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公开(公告)号：US20220068642A1
公开(公告)日：2022-03-03
申请号：US17411089
申请日：2021-08-25
Applicant: Tokyo Electron Limited
Inventor： Koji KAGAWA , Kenji SEKIGUCHI , Syuhei YONEZAWA , Daisuke SUZUKI , Yoshihiro TAKEZAWA , Yoshihisa MATSUBARA
IPC: H01L21/02 , H01L21/67 , H01L21/324
Abstract: A substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the method including: a holding process including holding, before executing the thermal treatment, a substrate on which the silicon film is formed; and an adhesion process including supplying, to the substrate that is held in the holding process, a solution containing metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].
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公开(公告)号：US20210217620A1
公开(公告)日：2021-07-15
申请号：US16769179
申请日：2018-12-07
Applicant: TOKYO ELECTRON LIMITED
Inventor： Koji KAGAWA , Takayuki TOSHIMA
IPC: H01L21/033 , H01L21/3213 , H01L21/67 , H01L21/02
Abstract: A substrate processing method includes (A) supplying to the substrate a first processing liquid containing a removing agent for deposit, a solvent having a boiling point lower than that of the removing agent and a thickener, (B), after (A), supplying to the substrate a second processing liquid containing an organic polymer to be a gas diffusion barrier film, (C), after (B), heating the substrate at a predetermined temperature equal to or higher than the boiling point of the solvent and lower than the boiling point of the removing agent to promote evaporation of the solvent and reaction between the deposit and the removing agent, and (D), after (C), supplying a rinsing liquid to the substrate to remove the deposit from the substrate. The gas diffusion barrier film prevents a gaseous reactive product generated by the reaction in (C) from diffusing around the substrate.
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