Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.