公开(公告)号：US20180096827A1

公开(公告)日：2018-04-05

申请号：US15719294

申请日：2017-09-28

Applicant: Tokyo Electron Limited

Inventor： Anton J. deVilliers ,  Mirko Vukovic ,  Brandon Byrns

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01L21/3065

CPC classification number: H01J37/32825 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32715 ,  H01J2237/20214 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/68764

Abstract: Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.

公开(公告)号：US11049700B2

公开(公告)日：2021-06-29

申请号：US15719294

申请日：2017-09-28

Applicant: Tokyo Electron Limited

Inventor： Anton J. deVilliers ,  Mirko Vukovic ,  Brandon Byrns

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H05H1/46 ,  H01L21/3065

Abstract: Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.