The present disclosure describes a method to form alignment marks on or in the top layer of an extreme ultraviolet (EUV) mask blank without the use of photolithographic methods. For example, the method can include forming a metal structure on the top layer of the EUV mask blank by dispensing a hexacarbonylchromium vapor on the top layer of the EUV mask and exposing the hexacarbonylchromium vapor to an electron-beam. The hexacarbonylchromium vapor is decomposed to form the metal structure at an area which is proximate to where the hexacarbonylchromium vapors interact with the electron-beam. In another example, the method can include forming a patterned structure in the top layer of an EUV mask blank with the use of an etcher aperture and an etching process.