公开(公告)号：US20180165803A1

公开(公告)日：2018-06-14

申请号：US15378482

申请日：2016-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hao CHENG ,  Peng-Ren CHEN ,  Chih-Chiang TU

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G06T2207/30148

Abstract: Methods and system for detecting hotspots in semiconductor wafer are provided. At least one semiconductor wafer is inspected to detect a plurality of hotspots of each die in the semiconductor wafer, wherein each of the hotspots has defect coordinates in a layout of the die. The hotspots of the dies are stacked in the layout according to the defect coordinates of the hotspots. A common pattern is obtained according to the stacked hotspots corresponding to a location with specific coordinates in the layout. It is determined whether the common pattern is a known pattern having an individual identification (ID) code. A new ID code is assigned to the common pattern when the common pattern is an unknown pattern.

公开(公告)号：US20180149963A1

公开(公告)日：2018-05-31

申请号：US15475903

申请日：2017-03-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Fu HSIEH ,  Chih-Chiang TU ,  Jong-Yuh CHANG ,  Hsin-Chang LEE

IPC: G03F1/42 ,  G03F1/24 ,  G03F1/54 ,  G03F1/48 ,  G03F1/78 ,  G03F1/80 ,  G03F1/82

CPC classification number: G03F1/42 ,  G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80 ,  G03F1/82 ,  G03F1/84

Abstract: The present disclosure describes a method to form alignment marks on or in the top layer of an extreme ultraviolet (EUV) mask blank without the use of photolithographic methods. For example, the method can include forming a metal structure on the top layer of the EUV mask blank by dispensing a hexacarbonylchromium vapor on the top layer of the EUV mask and exposing the hexacarbonylchromium vapor to an electron-beam. The hexacarbonylchromium vapor is decomposed to form the metal structure at an area which is proximate to where the hexacarbonylchromium vapors interact with the electron-beam. In another example, the method can include forming a patterned structure in the top layer of an EUV mask blank with the use of an etcher aperture and an etching process.

公开(公告)号：US20250063649A1

公开(公告)日：2025-02-20

申请号：US18451026

申请日：2023-08-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Fu TSENG ,  Chih-Chiang TU ,  Chih-Wei WEN ,  Chien-Hsing LU

IPC: H05G2/00

Abstract: A tin (Sn) auto-filling device and system provided to provide new liquid Sn to an inner sidewall surface of a rotation crucible. A laser is exposed to the liquid Sn at the inner sidewall surface of the rotation crucible to generate extreme-ultraviolet-light (EUV) that is utilized to process workpieces within a semiconductor manufacturing plant (FAB). The auto-filling device automatically refills as the liquid Sn at the inner sidewall surface of the rotation crucible is consumed due to the liquid Sn at the inner sidewall surface of the rotation crucible being exposed to the laser.

公开(公告)号：US20140189614A1

公开(公告)日：2014-07-03

申请号：US13732469

申请日：2013-01-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Gun LIU ,  Wen-Hao CHENG ,  Chih-Chiang TU ,  Shuo-Yen CHOU

IPC: G06F17/50

CPC classification number: G03F1/70 ,  G03F1/36

Abstract: A method comprises: (a) transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout; (b) replacing at least one pattern of the curvilinear mask layout with a previously stored fracturing template having approximately the same shape as the pattern, to form a fractured IC or MEMS layout; and (c) storing, in a non-transitory storage medium, an e-beam generation file including a representation of the fractured IC or MEMS layout, to be used for fabricating a photomask.

Abstract translation: 一种方法包括：（a）将集成电路（IC）或微机电系统（MEMS）的层的布局变换为曲线掩模布局; （b）用具有与图案大致相同形状的先前存储的压裂模板代替曲线掩模布局的至少一个图案，以形成断裂的IC或MEMS布局; 以及（c）在非暂时性存储介质中存储用于制造光掩模的电子束生成文件，其包括断裂的IC或MEMS布局的表示。

公开(公告)号：US20140014176A1

公开(公告)日：2014-01-16

申请号：US14032244

申请日：2013-09-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chiang TU ,  Chun-Lang CHEN

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/03923 ,  H01L31/03928 ,  H01L31/0463 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

Abstract: A photovoltaic device manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell using nanoimprint technology to define individual cell units of the photovoltaic device. The methods can include providing a substrate; forming a first conductive layer over the substrate; forming first grooves in the first conductive layer using a nanoimprint and etching process; forming an absorption layer over the first conductive layer, the absorption layer filling in the first grooves; forming second grooves in the absorption layer using a nanoimprint process; forming a second conductive layer over the absorption layer, the second conductive layer filling in the second grooves; and forming third grooves in the second conductive layer and the absorption layer, thereby defining a photovoltaic cell unit.

Abstract translation: 公开了一种光电器件制造方法。 方法包括使用纳米压印技术制造光伏电池来限定光伏器件的单个电池单元。 所述方法可以包括提供基底; 在所述衬底上形成第一导电层; 使用纳米压印和蚀刻工艺在所述第一导电层中形成第一凹槽; 在所述第一导电层上形成吸收层，所述吸收层填充在所述第一槽中; 使用纳米压印法在吸收层中形成第二凹槽; 在所述吸收层上形成第二导电层，所述第二导电层填充在所述第二槽中; 以及在所述第二导电层和所述吸收层中形成第三凹槽，从而限定光伏电池单元。