- 专利标题: METHOD OF MARKING MATERIAL AND SYSTEM THEREFORE, AND MATERIAL MARKED ACCORDING TO SAME METHOD
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申请号: US15905426申请日: 2018-02-26
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公开(公告)号: US20180193814A1公开(公告)日: 2018-07-12
- 发明人: Koon Chung HUI , Ho CHING , Ching Tom KONG
- 申请人: Chow Tai Fook Jewellery Company Limited
- 优先权: HK13106425.7 20130530
- 主分类号: B01J19/08
- IPC分类号: B01J19/08 ; C30B33/04 ; C30B29/04 ; H01J37/00 ; B41M3/14 ; C30B29/16 ; C30B29/34 ; C30B29/20
摘要:
A method of forming one or more protrusions on an outer surface of a polished face of a solid state material, said method including the step of applying focused inert gas ion beam local irradiation towards an outer surface of a polished facet of a solid state material in a way of protruding top surface material; wherein irradiated focused inert gas ions from said focused inert gas ion bean penetrate the outer surface of said polished facet of said solid state material; and wherein irradiated focused inert gas ions cause expansive strain within the solid state crystal lattice of the solid state material below said outer surface at a pressure so as to induce expansion of solid state crystal lattice, and form a protrusion on the outer surface of the polished face of said solid state material.
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