- 专利标题： ALD Process For NiO Film With Tunable Carbon Content
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申请号： US15863348申请日： 2018-01-05
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公开(公告)号： US20180195170A1公开(公告)日： 2018-07-12
- 发明人: Jeffrey W. Anthis , Ghazal Saheli , Feng Q. Liu , David Thompson
- 申请人： Applied Materials, Inc.
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C23C16/455
摘要：
Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.
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