公开(公告)号：US20160372324A1

公开(公告)日：2016-12-22

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

Abstract translation: 公开了通过原子层沉积沉积氧化钛膜的方法。 氧化钛膜可以包括氮化钛盖，富氧氮化钛盖或混合氧化物氮化物层。 还描述了包括氧化钛间隔膜的自对准双重图案的方法。

公开(公告)号：US20180195170A1

公开(公告)日：2018-07-12

申请号：US15863348

申请日：2018-01-05

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Ghazal Saheli ,  Feng Q. Liu ,  David Thompson

IPC: C23C16/40 ,  C23C16/455

CPC classification number: C23C16/40 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45553

Abstract: Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.

公开(公告)号：US20210066592A1

公开(公告)日：2021-03-04

申请号：US17000457

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Nasrin Kazem ,  Jeffrey W. Anthis ,  Ghazal Saheli ,  David Thompson

IPC: H01L45/00 ,  H01L27/24

Abstract: Methods of depositing a metal-organic oxide film by exposing a substrate surface to a metal-organic precursor and an oxidant are described. The metal-organic oxide film has the general formula MOxCy, wherein M comprises one or more of a transition metal, a lanthanide, or a boron group element, x is a whole number in a range of 1 to 6, and y is a number in a range of greater than 0 to 0.5.

公开(公告)号：US09881787B2

公开(公告)日：2018-01-30

申请号：US15184521

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh Kao ,  Benjamin Schmiege ,  Xuesong Lu ,  Juno Yu-Ting Huang ,  Yu Lei ,  Yung-Hsin Lee ,  Srinivas Gandikota ,  Rajkumar Jakkaraju ,  Chikuang Charles Wang ,  Ghazal Saheli ,  Benjamin C. Wang ,  Xinliang Lu ,  Pingyan Lei

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.