Invention Application
- Patent Title: WRAP-AROUND GATE STRUCTURES AND METHODS OF FORMING WRAP-AROUND GATE STRUCTURES
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Application No.: US15879109Application Date: 2018-01-24
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Publication No.: US20180233600A1Publication Date: 2018-08-16
- Inventor: Ravi Pramod Kumar Vedula , Stephen Alan Fanelli , Farid Azzazy
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/40 ; H01L29/06 ; H01L29/423
Abstract:
A semiconductor device includes a channel structure that includes a first oxide layer, a second oxide layer, and a channel region between the first oxide layer and the second oxide layer. The semiconductor device includes a first gate structure proximate to at least three sides of the channel structure. The semiconductor device includes a second gate structure proximate to at least a fourth side of the channel structure.
Public/Granted literature
- US10522687B2 Wrap-around gate structures and methods of forming wrap-around gate structures Public/Granted day:2019-12-31
Information query
IPC分类:
