- 专利标题: METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A GATE CONTACT POSITIONED ABOVE THE ACTIVE REGION
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申请号: US15477565申请日: 2017-04-03
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公开(公告)号: US20180286956A1公开(公告)日: 2018-10-04
- 发明人: Ruilong Xie , Chanro Park , Andre P. Labonte , Lars W. Liebmann , Nigel G. Cave , Mark V. Raymond , Guillaume Bouche , David E. Brown
- 申请人: GLOBALFOUNDRIES Inc.
- 主分类号: H01L29/417
- IPC分类号: H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L21/768 ; H01L27/088 ; H01L29/66 ; H01L21/8234 ; H01L21/3213
摘要:
One illustrative device disclosed herein includes, among other things, a stepped conductive source/drain structure with a first recess defined therein and a stepped final gate structure with a second recess defined therein, wherein, when viewed from above, the second recess is axially and laterally offset from the first recess. In this example, the device also includes a layer of insulating material positioned above the stepped conductive source/drain structure and the stepped final gate structure, a conductive gate (CB) contact that is conductively coupled to the stepped final gate structure and a conductive source/drain (CA) contact that is conductively coupled to the stepped conductive source/drain structure.
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