发明申请
- 专利标题: BULK ACOUSTIC WAVE RESONATOR
-
申请号: US15814869申请日: 2017-11-16
-
公开(公告)号: US20180337656A1公开(公告)日: 2018-11-22
- 发明人: Tae Hun LEE , Chang Hyun LIM , Tae Yoon KIM , Moon Chul LEE
- 申请人: Samsung Electro-Mechanics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2017-0061417 20170518
- 主分类号: H03H9/125
- IPC分类号: H03H9/125 ; H03H9/17
摘要:
A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.
公开/授权文献
- US10784837B2 Bulk acoustic wave resonator 公开/授权日:2020-09-22
信息查询