公开(公告)号：US20230080684A1

公开(公告)日：2023-03-16

申请号：US17859557

申请日：2022-07-07

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Joo Young KIM ,  Won Hyeong KIM ,  Hyung Sub WOO ,  Hyung Joon JEON ,  Young Bin JEONG

IPC: H01G4/30 ,  H01G4/12 ,  H01G4/012 ,  C04B35/626 ,  C04B35/468 ,  C04B35/64

Abstract: A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of first secondary phases, the first secondary phase is a secondary phase including Ni, Mg, Al, Si, and O, and at least one of the plurality of first secondary phases has a ratio of a major axis length to a minor axis length of 4 or more.

公开(公告)号：US20220116016A1

公开(公告)日：2022-04-14

申请号：US17222018

申请日：2021-04-05

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won HAN ,  Sang Uk SON ,  Tae Yoon KIM ,  Chang Hyun LIM ,  Sang Heon HAN ,  Jong Beom KIM

IPC: H03H9/17

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.

公开(公告)号：US20220085791A1

公开(公告)日：2022-03-17

申请号：US17231330

申请日：2021-04-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Won HAN ,  Sang Hyun YI ,  Jae Hyoung GIL ,  Sang Kee YOON ,  Moon Chul LEE

IPC: H03H9/17 ,  H03H9/02

Abstract: A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a cavity disposed between the substrate and the first electrode; a piezoelectric layer covering at least a portion of the first electrode; a second electrode covering at least a portion of the piezoelectric layer; an insertion layer disposed between the first electrode and the piezoelectric layer; and a lower frame disposed in the cavity. At least a portion of the lower frame overlaps the insertion layer.

公开(公告)号：US20190386641A1

公开(公告)日：2019-12-19

申请号：US16190573

申请日：2018-11-14

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Jong Woon KIM ,  Moon Chul LEE ,  Yong Jin KANG ,  Nam Jung LEE

IPC: H03H9/17 ,  H03H9/58 ,  H03H9/13 ,  H03H3/02

Abstract: An acoustic resonator includes a substrate, and a resonant portion comprising a center portion in which a first electrode, a piezoelectric layer and a second electrode are sequentially laminated on the substrate, and an extending portion disposed along a periphery of the center portion, wherein the resonant portion is configured to have an asymmetrical polygonal plane, an insertion layer is disposed below the piezoelectric layer in the extending portion, and the piezoelectric layer is configured to have a top surface which is raised to conform to a shape of the insertion layer, and the insertion layer is configured to have an asymmetrical polygonal shape corresponding to a shape of the extending portion.

公开(公告)号：US20160344367A1

公开(公告)日：2016-11-24

申请号：US15058713

申请日：2016-03-02

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Yeong Gyu LEE ,  Moon Chul LEE ,  Jae Chang LEE ,  Duck Hwan KIM

IPC: H03H9/13 ,  H03H3/02

CPC classification number: H03H9/131 ,  H03H3/02 ,  H03H9/1007

Abstract: A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.

Abstract translation: 提供了一种谐振器封装及其制造方法。 制造谐振器封装的方法包括用硬掩模蚀刻下电极，其中仅蚀刻下电极的厚度的一部分以使下电极成形。

公开(公告)号：US20160329481A1

公开(公告)日：2016-11-10

申请号：US14991110

申请日：2016-01-08

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Yeong Gyu LEE ,  Moon Chul LEE ,  Jae Chang LEE ,  Duck Hwan KIM

IPC: H03H9/54 ,  H01L41/047

CPC classification number: H03H9/1014

Abstract: A bulk acoustic wave resonator includes a resonating part comprising a first electrode, a piezoelectric layer, and a second electrode sequentially laminated, wherein the resonating part is disposed on a substrate; and a cap comprising a groove part configured to accommodate the resonating part, a frame bonded to the substrate by a bonding agent, and a permeation preventing part configured to block the bonding agent from permeating into the groove part from the frame.

Abstract translation: 一种体声波谐振器包括：谐振部分，包括第一电极，压电层和顺序层压的第二电极，其中所述谐振部分设置在基板上; 以及帽，其包括构造成容纳所述共振部的槽部，通过接合剂与所述基板接合的框架，以及防止粘结剂从所述框架向所述槽部渗透的防渗透部。

公开(公告)号：US20140092524A1

公开(公告)日：2014-04-03

申请号：US13735614

申请日：2013-01-07

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Sung Min CHO ,  Young Sik KANG

IPC: H01G4/01 ,  H01G4/008 ,  H01G4/06

CPC classification number: H01G4/01 ,  H01G4/008 ,  H01G4/06 ,  H01G4/1227 ,  H01G4/33 ,  H01G4/38 ,  H01L28/90 ,  Y10T156/10

Abstract: There is provided a capacitor, including: a substrate part including a first substrate having a groove portion and a second substrate positioned above the first substrate and having a protrusion portion; a first capacitance part formed on one surface of the first substrate and having a shape corresponding to that of the groove portion; and a second capacitance part formed on one surface of the second substrate and having a shape corresponding to that of the protrusion portion.

Abstract translation: 提供了一种电容器，包括：基板部分，包括具有凹槽部分的第一基板和位于第一基板上方并具有突出部分的第二基板; 第一电容部，形成在所述第一基板的一个表面上，并且具有与所述槽部的形状对应的形状; 以及形成在所述第二基板的一个表面上并且具有与所述突出部的形状相对应的形状的第二电容部。

公开(公告)号：US20210367582A1

公开(公告)日：2021-11-25

申请号：US17104703

申请日：2020-11-25

Applicant: Samsung Electro-Mechanics Co., Ltd

Inventor： Tae Kyung LEE ,  Ran Hee SHIN ,  Chang Hyun LIM ,  Tae Yoon KIM ,  Sang Kee YOON ,  Moon Chul LEE ,  Jae Goon AUM

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13 ,  H03H3/02 ,  H01L41/29 ,  H01L41/35

Abstract: A bulk-acoustic wave resonator includes: a substrate; and a resonator portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc). The bulk-acoustic wave resonator satisfies the following expression: leakage current density×scandium (Sc) content

公开(公告)号：US20210313950A1

公开(公告)日：2021-10-07

申请号：US16930885

申请日：2020-07-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won HAN ,  Tae Yoon KIM ,  Chang Hyun LIM ,  Sang Uk SON ,  Jae Hyoung GIL ,  Dae Hun JEONG

IPC: H03H9/02 ,  H03H9/13 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator includes: a first electrode disposed above a substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. A plurality of steps are formed in any one or any combination of any two or more of the first electrode, the piezoelectric layer, and the second electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode are all disposed to overlap one another.

公开(公告)号：US20180337650A1

公开(公告)日：2018-11-22

申请号：US15815966

申请日：2017-11-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Chang Hyun LIM ,  Tae Yoon KIM ,  Moon Chul LEE

IPC: H03H3/007 ,  H03H3/04 ,  H03H9/00 ,  H03H7/42

CPC classification number: H03H3/0077 ,  H03H3/02 ,  H03H3/04 ,  H03H7/422 ,  H03H9/0095 ,  H03H9/0542 ,  H03H9/173 ,  H03H2003/0071 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.