公开(公告)号：US20180019725A1

公开(公告)日：2018-01-18

申请号：US15623875

申请日：2017-06-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Chang Hyun LIM ,  Han Tae KIM ,  Tae Hun LEE ,  Tae Kyung LEE ,  Tae Yoon Kim

IPC: H03H9/10 ,  H03H9/17 ,  H03H3/02 ,  H01L41/23 ,  H01L41/277 ,  H01L41/25 ,  H03H9/64 ,  H03H9/00

CPC classification number: H03H9/1007 ,  H01L41/23 ,  H01L41/25 ,  H01L41/277 ,  H03H3/02 ,  H03H9/009 ,  H03H9/02118 ,  H03H9/173 ,  H03H9/64 ,  H03H2003/021

Abstract: A bulk acoustic wave filter device and method thereof includes a first layer forming an air gap together with a substrate, a lower electrode disposed over the first layer, a piezoelectric layer disposed to cover a portion of the lower electrode, an upper electrode disposed over the piezoelectric layer, a frame layer disposed below the upper electrode, and a lower electrode reinforcing layer disposed on the lower electrode, other than portions in which the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode or the frame layer upon one of the upper electrode and the frame layer being formed.

公开(公告)号：US20170366156A1

公开(公告)日：2017-12-21

申请号：US15384385

申请日：2016-12-20

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Won HAN ,  Tae Hun LEE ,  Dae Hun JEONG ,  Moon Chul LEE ,  Sang Uk SON

IPC: H03H9/02 ,  H03H9/54

CPC classification number: H03H9/02007 ,  H03H9/02086 ,  H03H9/132 ,  H03H9/173 ,  H03H9/174 ,  H03H9/54

Abstract: An acoustic wave filter device includes a lower electrode disposed between a substrate and a piezoelectric layer, an upper electrode disposed on the piezoelectric layer, and an insulating layer disposed on the upper electrode. The insulating layer exposes portions of the upper electrode.

公开(公告)号：US20170101307A1

公开(公告)日：2017-04-13

申请号：US15181480

申请日：2016-06-14

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Chang Hyun LIM ,  Tae Hun LEE ,  Dae Hun JEONG

IPC: B81B7/00 ,  G01D11/24 ,  H01L23/053 ,  H01L25/16 ,  H01L23/00

CPC classification number: B81B7/008 ,  B81B7/0048 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/012 ,  G01D11/245 ,  H01L23/053 ,  H01L24/17 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/16 ,  H01L2224/16055 ,  H01L2224/16057 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/85399

Abstract: There is provided a semiconductor package that comprises a board; a semiconductor chip disposed on the board and having an installation recess; an adhesive layer disposed within the installation recess; and a sensor unit disposed on the adhesive layer.

公开(公告)号：US20180048281A1

公开(公告)日：2018-02-15

申请号：US15487620

申请日：2017-04-14

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Moon Chul LEE ,  Jae Chang LEE ,  Chang Hyun LIM ,  Tae Hun LEE ,  Tae Kyung LEE ,  Tae Yoon KIM

IPC: H03H9/02 ,  H01L41/047 ,  H03H9/54

CPC classification number: H03H9/02102 ,  H01L41/047 ,  H03H9/173 ,  H03H9/542 ,  H03H9/564

Abstract: A bulk acoustic filter device includes: a substrate; a cavity forming layer disposed on the substrate so as to form a cavity; a lower electrode disposed on the cavity; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer; and a temperature compensation layer disposed below the lower electrode and in the cavity portion.

公开(公告)号：US20180013401A1

公开(公告)日：2018-01-11

申请号：US15391353

申请日：2016-12-27

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Hun LEE ,  Won HAN ,  Moon Chul LEE ,  Sung HAN

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/54 ,  H03H3/007 ,  H03H3/02

Abstract: An acoustic resonator including a substrate, an active vibration region including, sequentially stacked on the substrate, a lower electrode, a piezoelectric layer, and an upper electrode, and a horizontal resonance suppressing part formed from and disposed in the piezoelectric layer, the horizontal resonance suppressing part having piezoelectric physical properties that are different from piezoelectric physical properties of the piezoelectric layer.

公开(公告)号：US20160209344A1

公开(公告)日：2016-07-21

申请号：US14881667

申请日：2015-10-13

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE

IPC: G01N27/02 ,  G01K7/16 ,  G01L9/00 ,  H01L25/16 ,  H01L25/00

CPC classification number: G01K7/16 ,  G01L9/0042 ,  G01L9/0052 ,  G01L9/0054 ,  G01L19/0092 ,  G01N27/223 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/10155 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A complex sensor, a package including a complex sensor and a method of manufacturing the same are provided. The complex sensor includes a base, a first sensor unit disposed on a first surface of the base, and a second sensor unit disposed on a second surface of the base.

Abstract translation: 提供了一种复杂的传感器，包括复合传感器的封装及其制造方法。 复合传感器包括基座，设置在基座的第一表面上的第一传感器单元和设置在基座的第二表面上的第二传感器单元。

公开(公告)号：US20230022838A1

公开(公告)日：2023-01-26

申请号：US17579944

申请日：2022-01-20

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Sang Heon HAN ,  Won HAN ,  Tae Hun LEE ,  Chang Hyun LIM ,  Ran Hee SHIN

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/02

Abstract: An acoustic resonator includes a substrate and a resonant portion. The resonant portion has a central portion in which a first electrode, a first piezoelectric layer, a second piezoelectric layer, and a second electrode are stacked in order on the substrate, and an extension portion extending outwardly from the central portion and including an insertion layer. A ratio of an average thickness of the first piezoelectric layer to an average thickness of the second piezoelectric layer is 18.4% to 40%.

公开(公告)号：US20210075398A1

公开(公告)日：2021-03-11

申请号：US16875019

申请日：2020-05-15

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Chang Hyun LIM ,  Sang Kee YOON

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13 ,  H03H9/05 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.

公开(公告)号：US20180337650A1

公开(公告)日：2018-11-22

申请号：US15815966

申请日：2017-11-17

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Chang Hyun LIM ,  Tae Yoon KIM ,  Moon Chul LEE

IPC: H03H3/007 ,  H03H3/04 ,  H03H9/00 ,  H03H7/42

CPC classification number: H03H3/0077 ,  H03H3/02 ,  H03H3/04 ,  H03H7/422 ,  H03H9/0095 ,  H03H9/0542 ,  H03H9/173 ,  H03H2003/0071 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.

公开(公告)号：US20180062608A1

公开(公告)日：2018-03-01

申请号：US15647660

申请日：2017-07-12

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Dae Ho KIM ,  Chang Hyun LIM ,  Tae Hun LEE ,  Sang Kee YOON ,  Jong Woon KIM ,  Won HAN ,  Moon Chul LEE

IPC: H03H9/02 ,  H03H9/54 ,  H01L41/047 ,  H03H9/56

CPC classification number: H03H9/02015 ,  H01L41/047 ,  H03H3/02 ,  H03H9/02062 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/173 ,  H03H9/542 ,  H03H9/545 ,  H03H9/547 ,  H03H9/562 ,  H03H9/568 ,  H03H9/605 ,  H03H2003/021

Abstract: A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.