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公开(公告)号：US20220116016A1
公开(公告)日：2022-04-14
申请号：US17222018
申请日：2021-04-05
发明人： Won HAN , Sang Uk SON , Tae Yoon KIM , Chang Hyun LIM , Sang Heon HAN , Jong Beom KIM
IPC分类号： H03H9/17
摘要： A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.
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公开(公告)号：US20190356293A1
公开(公告)日：2019-11-21
申请号：US16400052
申请日：2019-05-01
发明人： Yong Suk KIM , Moon Chul LEE , Sung Jun LEE , Chang Hyun LIM , Jae Hyoung GIL , Sang Hyun YI
摘要： A bulk acoustic wave resonator includes a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the lower electrode; an upper electrode disposed to cover at least a portion of the piezoelectric layer; and a passivation layer disposed to cover at least a portion of the upper electrode, wherein the passivation layer includes a non-trimming-processed portion disposed outside an active region of the bulk acoustic wave resonator in which portions of the lower electrode, the piezoelectric layer, and the upper electrode overlap, and having a thickness that is thicker than a thickness of a portion of the passivation layer disposed in the active region.
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公开(公告)号：US20190013792A1
公开(公告)日：2019-01-10
申请号：US15972694
申请日：2018-05-07
发明人： Tae Kyung LEE , Sung Sun KIM , Sang Kee YOON , Chang Hyun LIM , Jin Suk SON , Ran Hee SHIN , Je Hong KYOUNG
IPC分类号： H03H9/17 , H03H9/13 , H03H3/02 , H01L41/047 , H01L41/314 , H01L41/29
摘要： An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.
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公开(公告)号：US20180019725A1
公开(公告)日：2018-01-18
申请号：US15623875
申请日：2017-06-15
发明人： Chang Hyun LIM , Han Tae KIM , Tae Hun LEE , Tae Kyung LEE , Tae Yoon Kim
CPC分类号： H03H9/1007 , H01L41/23 , H01L41/25 , H01L41/277 , H03H3/02 , H03H9/009 , H03H9/02118 , H03H9/173 , H03H9/64 , H03H2003/021
摘要： A bulk acoustic wave filter device and method thereof includes a first layer forming an air gap together with a substrate, a lower electrode disposed over the first layer, a piezoelectric layer disposed to cover a portion of the lower electrode, an upper electrode disposed over the piezoelectric layer, a frame layer disposed below the upper electrode, and a lower electrode reinforcing layer disposed on the lower electrode, other than portions in which the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode or the frame layer upon one of the upper electrode and the frame layer being formed.
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公开(公告)号：US20180019723A1
公开(公告)日：2018-01-18
申请号：US15623703
申请日：2017-06-15
发明人： Chang Hyun LIM , Jae Chang LEE , Sung Min CHO , Tae Kyung LEE , Moon Chul LEE
IPC分类号： H03H9/02 , H03H9/56 , H01L41/047
CPC分类号： H03H9/02118 , H03H9/131 , H03H9/173 , H03H9/564
摘要： A bulk acoustic wave filter device includes a resonating part, an electrode connecting part, a first layer, and a second layer. The resonating part is disposed on a substrate, and the electrode connecting part connects electrodes of the resonating part. The first layer is disposed on the substrate, and the second layer is disposed on regions of the first layer, other than a lower portion of the electrode connecting part.
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公开(公告)号：US20170101307A1
公开(公告)日：2017-04-13
申请号：US15181480
申请日：2016-06-14
发明人： Chang Hyun LIM , Tae Hun LEE , Dae Hun JEONG
IPC分类号： B81B7/00 , G01D11/24 , H01L23/053 , H01L25/16 , H01L23/00
CPC分类号： B81B7/008 , B81B7/0048 , B81B2201/0235 , B81B2201/0264 , B81B2207/012 , G01D11/245 , H01L23/053 , H01L24/17 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/16 , H01L2224/16055 , H01L2224/16057 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48225 , H01L2224/73265 , H01L2924/00014 , H01L2924/10158 , H01L2924/1461 , H01L2924/15153 , H01L2224/05599 , H01L2224/45099 , H01L2224/85399
摘要： There is provided a semiconductor package that comprises a board; a semiconductor chip disposed on the board and having an installation recess; an adhesive layer disposed within the installation recess; and a sensor unit disposed on the adhesive layer.
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公开(公告)号：US20140174940A1
公开(公告)日：2014-06-26
申请号：US14179207
申请日：2014-02-12
发明人： Chang Hyun LIM , Seog Moon CHOI , Sang Hyun SHIN , Young Ki LEE , Sung Keun PARK
IPC分类号： H05K3/02
CPC分类号： H05K3/02 , H05K1/0201 , H05K1/053 , H05K3/0061 , H05K2201/062 , H05K2201/09881 , H05K2201/09972 , H05K2203/0315
摘要： Embodiments of the invention provide a heat-dissipating substrate and a fabricating method of the heat-dissipating substrate. According to various embodiments, the heat-dissipating substrate includes a plating layer divided by a first insulator formed in a division area. A metal plate is formed on an upper surface of the plating layer and filled with a second insulator at a position corresponding to the division area, with an anodized layer formed on a surface of the metal plate. A circuit layer is formed on the anodized layer which is formed on an upper surface of the metal plate. The heat-dissipating substrate and fabricating method thereof achieves thermal isolation by a first insulator formed in a division area and a second insulator.
摘要翻译： 本发明的实施例提供散热基板和散热基板的制造方法。 根据各种实施例，散热基板包括由形成在分割区域中的第一绝缘体分隔的镀层。 金属板形成在镀层的上表面上，并且在对应于分割区域的位置处填充有第二绝缘体，阳极氧化层形成在金属板的表面上。 在形成在金属板的上表面上的阳极氧化层上形成电路层。 散热基板及其制造方法通过形成在分割区域和第二绝缘体中的第一绝缘体进行热隔离。
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公开(公告)号：US20190058455A1
公开(公告)日：2019-02-21
申请号：US15996921
申请日：2018-06-04
发明人： Tae Yoon KIM , Won HAN , Chang Hyun LIM
摘要： A bulk-acoustic wave resonator includes a substrate; a lower electrode formed on the substrate, and at least a portion of the lower electrode is formed on a cavity; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a membrane layer formed below the lower electrode and forming the cavity together with the substrate; and a protruding portion formed on the membrane layer and further formed in the cavity in a direction that extends away from the membrane layer.
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公开(公告)号：US20180205360A1
公开(公告)日：2018-07-19
申请号：US15812842
申请日：2017-11-14
发明人： Won HAN , Dae Ho KIM , Yong Suk KIM , Seung Hun HAN , Moon Chul LEE , Chang Hyun LIM , Sung Jun LEE , Sang Kee YOON , Tae Yoon KIM , Sang Uk SON
CPC分类号： H03H9/02118 , H03H3/02 , H03H9/02015 , H03H9/02157 , H03H9/132 , H03H9/17 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.
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公开(公告)号：US20180152168A1
公开(公告)日：2018-05-31
申请号：US15789024
申请日：2017-10-20
发明人： Won HAN , Chang Hyun LIM , Yong Suk KIM , Seung Hun HAN , Sung Jun LEE , Sang Kee YOON , Tae Yoon KIM
IPC分类号： H03H9/02 , H03H9/17 , H01L41/047
CPC分类号： H03H9/02007 , H01L41/047 , H03H9/02015 , H03H9/02118 , H03H9/02157 , H03H9/17 , H03H9/173 , H03H9/174 , H03H9/54
摘要： A bulk acoustic wave resonator includes a membrane layer, together with a substrate, forming a cavity, a lower electrode disposed on the membrane layer, a piezoelectric layer disposed on a flat surface of the lower electrode and an upper electrode covering a portion of the piezoelectric layer. An overall region at a side of the piezoelectric layer is exposed to the air. The side of the piezoelectric layer has a gradient of 65° to 90° with respect to a top surface of the lower electrode.
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