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公开(公告)号：US20230370048A1
公开(公告)日：2023-11-16
申请号：US18101267
申请日：2023-01-25
发明人： Kwang Su KIM , Jae Hyoung GIL , Moon Chul LEE , Yong Suk KIM , Dong Hyun PARK , Tae Kyung LEE
CPC分类号： H03H9/174 , H03H9/131 , H03H9/02015 , H03H9/173
摘要： A bulk-acoustic wave resonator includes a substrate; a lower electrode, disposed on the substrate, comprising a first inclined surface and a second inclined surface; and an insertion layer disposed on an edge of the lower electrode. The first inclined surface extends from an inclined surface of the insertion layer in a region disposed inside the insertion layer. The second inclined surface extends from the first inclined surface in a region inside a region of the first inclined surface.
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公开(公告)号：US20220038075A1
公开(公告)日：2022-02-03
申请号：US17144602
申请日：2021-01-08
发明人： Tae Kyung LEE , Won Han , Moon Chul LEE , Sang Uk SON , Hwa Sun LEE
摘要： A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.
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公开(公告)号：US20210367582A1
公开(公告)日：2021-11-25
申请号：US17104703
申请日：2020-11-25
发明人： Tae Kyung LEE , Ran Hee SHIN , Chang Hyun LIM , Tae Yoon KIM , Sang Kee YOON , Moon Chul LEE , Jae Goon AUM
摘要： A bulk-acoustic wave resonator includes: a substrate; and a resonator portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc). The bulk-acoustic wave resonator satisfies the following expression: leakage current density×scandium (Sc) content
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公开(公告)号：US20180337650A1
公开(公告)日：2018-11-22
申请号：US15815966
申请日：2017-11-17
发明人： Tae Hun LEE , Chang Hyun LIM , Tae Yoon KIM , Moon Chul LEE
CPC分类号： H03H3/0077 , H03H3/02 , H03H3/04 , H03H7/422 , H03H9/0095 , H03H9/0542 , H03H9/173 , H03H2003/0071 , H03H2003/021
摘要： A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.
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公开(公告)号：US20180254764A1
公开(公告)日：2018-09-06
申请号：US15797265
申请日：2017-10-30
发明人： Tae Kyung LEE , Won HAN , Tae Yoon KIM , Jong Woon KIM , Moon Chul LEE , Chang Hyun LIM , Sang Kee YOON , Hwa Sun LEE , Dae Hun JEONG
CPC分类号： H03H9/174 , H03H3/02 , H03H9/02118 , H03H9/0504 , H03H9/173 , H03H9/547 , H03H2003/021 , H03H2003/023
摘要： An acoustic resonator includes: a central portion; an extension portion extended outwardly of the central portion; a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, in the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion, wherein the piezoelectric layer includes a piezoelectric portion disposed in the central portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline depending on a shape of the insertion layer.
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公开(公告)号：US20180062608A1
公开(公告)日：2018-03-01
申请号：US15647660
申请日：2017-07-12
发明人： Tae Kyung LEE , Tae Yoon KIM , Dae Ho KIM , Chang Hyun LIM , Tae Hun LEE , Sang Kee YOON , Jong Woon KIM , Won HAN , Moon Chul LEE
IPC分类号： H03H9/02 , H03H9/54 , H01L41/047 , H03H9/56
CPC分类号： H03H9/02015 , H01L41/047 , H03H3/02 , H03H9/02062 , H03H9/02118 , H03H9/02157 , H03H9/173 , H03H9/542 , H03H9/545 , H03H9/547 , H03H9/562 , H03H9/568 , H03H9/605 , H03H2003/021
摘要： A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 Å or less.
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公开(公告)号：US20180054182A1
公开(公告)日：2018-02-22
申请号：US15635551
申请日：2017-06-28
发明人： Tae Yoon KIM , Tae Kyung LEE , Sung Min CHO , Sang Kee YOON , Moon Chul LEE
CPC分类号： H03H9/173 , H03H9/02133 , H03H9/174
摘要： A bulk acoustic wave resonator includes: a support part disposed on a substrate; a layer disposed on the support part, wherein an air cavity is formed between the support part, the substrate and the layer; and a frame extending along the layer, within the air cavity, and spaced apart from the support part.
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公开(公告)号：US20170174503A1
公开(公告)日：2017-06-22
申请号：US15091057
申请日：2016-04-05
发明人： Moon Chul LEE , Duck Hwan KIM , Yeong Gyu LEE , Jae Chang LEE , Tae Yoon KIM , Kyong Bok MIN
CPC分类号： B81B7/007 , B81B2201/0271 , B81B2203/0315 , B81C1/00269 , B81C2203/0118 , H01L21/561 , H01L23/10 , H01L23/3114
摘要： A wafer level package includes a wafer member having inner cavities in which circuit elements are disposed, element wall members disposed on an internal surface of the wafer member and enclosing element sections in which the circuit elements are disposed, and clearance wall members disposed on external surfaces of the element wall members and dividing a space between the element sections into clearance sections.
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公开(公告)号：US20160079956A1
公开(公告)日：2016-03-17
申请号：US14638529
申请日：2015-03-04
发明人： Sang Uk SON , Duck Hwan KIM , Jea Shik SHIN , Yeong Gyu LEE , Chul Soo KIM , Moon Chul LEE , Ho Soo PARK , Jie Ai YU
CPC分类号： H03H9/02086 , H03H3/02 , H03H3/04 , H03H9/173 , H03H2003/0414
摘要： There is provided an acoustic resonator including: a resonance part including a first electrode, a second electrode, and a piezoelectric layer interposed between the first and second electrodes; and a substrate provided below the resonance part, wherein the substrate includes at least one via hole penetrating through the substrate and a connective conductor formed in the via hole and connected to at least one of the first and second electrodes. Therefore, reliability of the connective conductor formed in the substrate may be secured.
摘要翻译： 提供了一种声谐振器，包括：谐振部分，包括第一电极，第二电极和介于第一和第二电极之间的压电层; 以及设置在谐振部件下方的基板，其中，所述基板包括贯穿所述基板的至少一个通孔以及形成在所述通孔中并连接到所述第一和第二电极中的至少一个的连接导体。 因此，可以确保形成在基板中的连接导体的可靠性。
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公开(公告)号：US20220085791A1
公开(公告)日：2022-03-17
申请号：US17231330
申请日：2021-04-15
发明人： Tae Yoon KIM , Won HAN , Sang Hyun YI , Jae Hyoung GIL , Sang Kee YOON , Moon Chul LEE
摘要： A bulk-acoustic wave resonator includes: a substrate; a first electrode disposed on the substrate; a cavity disposed between the substrate and the first electrode; a piezoelectric layer covering at least a portion of the first electrode; a second electrode covering at least a portion of the piezoelectric layer; an insertion layer disposed between the first electrode and the piezoelectric layer; and a lower frame disposed in the cavity. At least a portion of the lower frame overlaps the insertion layer.
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