- 专利标题: RESIST COMPOSITION AND RESIST PATTERNING PROCESS
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申请号: US16012124申请日: 2018-06-19
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公开(公告)号: US20190010119A1公开(公告)日: 2019-01-10
- 发明人: Takahiro SUZUKI , Daisuke DOMON , Masaaki KOTAKE , Keiichi MASUNAGA , Satoshi WATANABE
- 申请人: SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2017-131534 20170704
- 主分类号: C07C309/42
- IPC分类号: C07C309/42 ; C07C309/25 ; C07C309/29 ; C07C309/35 ; C07C309/38 ; C07C309/39 ; C07C309/44 ; C07C309/59 ; C07C323/66 ; G03F7/004 ; G03F7/038 ; G03F7/039
摘要:
The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.
公开/授权文献
- US11131926B2 Resist composition and resist patterning process 公开/授权日:2021-09-28