- 专利标题: SEMICONDUCTOR PACKAGE HAVING A VARIABLE REDISTRIBUTION LAYER THICKNESS
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申请号: US16152221申请日: 2018-10-04
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公开(公告)号: US20190043800A1公开(公告)日: 2019-02-07
- 发明人: Klaus Jürgen REINGRUBER , Sven ALBERS , Christian Georg GEISSLER , Georg SEIDEMANN , Bernd WAIDHAS , Thomas WAGNER , Marc DITTES
- 申请人: Intel IP Corporation
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H05K1/11 ; H01L23/00 ; H01L23/498 ; C25D5/10 ; C25D7/12 ; C25D5/02 ; H01L23/522 ; C25D5/48 ; C25D5/54 ; H05K1/02
摘要:
Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.